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參數(shù)資料
| 型號： | MTD2955VT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 85K |
| 代理商： | MTD2955VT4 |
MTD2955V
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
Figure 3. OnResistance versus Drain Current
and Temperature
Figure 4. OnResistance versus Drain Current
and Gate Voltage
Figure 5. OnResistance Variation with
Temperature
Figure 6. DrainToSource Leakage
Current versus Voltage
0
1
2
3
4
5
0
15
25
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
ID
2
4
6
8
10
0
9
18
24
ID
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
T
J
= 25
°
C
V
DS
≥
10 V
T
J
= 55
°
C
25
°
C
100
°
C
V
GS
= 10 V
9 V
8 V
6 V
5 V
7 V
5
10
20
3
5
7
9
3
12
21
6
7
8
9
10
15
6
R
0
3
6
15
24
0
0.10
0.20
0.30
R
0
6
21
24
0.050
0.075
0.200
0.250
I
D
, DRAIN CURRENT (AMPS)
I
D
, DRAIN CURRENT (AMPS)
T
J
= 25
°
C
V
GS
= 10 V
T
J
= 100
°
C
25
°
C
55
°
C
12
21
3
12
15
0.05
0.15
0.25
0.100
0.225
0.125
V
GS
= 10 V
15 V
18
9
0.35
0.40
0.175
9
18
0.150
R
(
50
0.6
0.8
1.2
1.6
0
20
50
60
10
100
1000
T
J
, JUNCTION TEMPERATURE (
°
C)
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
25
0
25
50
75
100
125
150
V
GS
= 0 V
V
GS
= 10 V
I
D
= 6 A
10
30
40
1.0
1.4
T
J
= 125
°
C
175
0.4
0.2
0
1.8
2.0
100
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD2955VT4G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2N20 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTD2N40E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 400V 2A 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD2N40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD2N50 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
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