- 您現在的位置：買賣IC網 > PDF目錄98045 > MTB50P03HDLT4 (MOTOROLA INC) 50 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | MTB50P03HDLT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 30 V, 0.03 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 文件頁數： | 6/12頁 |
| 文件大?。?/td> | 182K |
| 代理商： | MTB50P03HDLT4 |
MTB50P03HDL
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
ID, DRAIN CURRENT (AMPS)
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
I DSS
,LEAKAGE
(nA)
ID, DRAIN CURRENT (AMPS)
I D
,DRAIN
CURRENT
(AMPS)
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
I D
,DRAIN
CURRENT
(AMPS)
0
20
40
80
100
60
0
0.4
0.8
1.2
1.6
2.0
0
20
40
80
100
Figure 1. On–Region Characteristics
1.5
1.9
2.3
2.7
3.5
4.3
Figure 2. Transfer Characteristics
0
2040
6080
100
0.015
0.017
0.021
0.025
0.029
0.015
0.017
0.019
0.021
0.022
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0.85
0.95
1.05
1.25
1.35
0
5
10
20
25
30
100
1000
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–to–Source Leakage
Current versus Voltage
– 25
0
25
50
75
100
125
150
60
0.2
0.6
1.0
1.4
1.8
3.9
0.027
0.023
0.019
0
2040
6080
100
0.020
0.018
0.016
1.15
15
VGS = 10 V
4 V
8 V
100
°C
25
°C
TJ = – 55°C
TJ = 25°C
10 V
VGS = 5 V
–55
°C
VGS = 0 V
TJ = 125°C
100
°C
3 V
3.5 V
TJ = 25°C
6 V
3.1
VGS = 5 V
ID = 25 A
TJ = 100°C
25
°C
10
2.5 V
5 V
4.5 V
VDS ≥ 5 V
相關PDF資料 |
PDF描述 |
|---|---|
| MTB52N06VLT4 | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB52N06VL | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB52N06VLT4G | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB52N06VT4 | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N05HDT4 | 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MTB50P03HDLT4G | 功能描述:MOSFET PFET D2PAK 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50SA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB50SAM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB50SAV | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
| MTB50SAVM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Full-Size (7.3mm or 4.7mm height) |
發(fā)布緊急采購，3分鐘左右您將得到回復。