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參數(shù)資料
| 型號(hào)： | MTB52N06VLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 115K |
| 代理商： | MTB52N06VLT4 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 4
1
Publication Order Number:
MTB52N06VL/D
MTB52N06VL
Preferred Device
Power MOSFET
52 Amps, 60 Volts, Logic Level
N–Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–to–Source Voltage
– Continuous
– Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
±15
±25
Vdc
Vpk
Drain Current
– Continuous
– Continuous @ 100
°C
– Single Pulse (tp ≤ 10 s)
ID
IDM
52
41
182
Adc
Apk
Total Power Dissipation
Derate above 25
°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD
188
1.25
3.0
Watts
W/
°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
– 55 to
175
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 5 Vdc, Peak
IL = 52 Apk, L = 0.3 mH, RG = 25 )
EAS
406
mJ
Thermal Resistance
– Junction to Case
– Junction to Ambient
– Junction to Ambient (Note 1.)
R
θJC
R
θJA
R
θJA
0.8
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from Case for 10
seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
MARKING DIAGRAM
& PIN ASSIGNMENT
MTB52N06VL
YWW
1
Gate
4
Drain
2
Drain
3
Source
52 AMPERES
60 VOLTS
RDS(on) = 25 m
Device
Package
Shipping
ORDERING INFORMATION
MTB52N06VL
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
http://onsemi.com
N–Channel
D
S
G
MTB52N06VL
= Device Code
Y
= Year
WW
= Work Week
MTB52N06VLT4
D2PAK
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
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PDF描述 |
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| MTB52N06VL | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB52N06VLT4G | 52 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB52N06VT4 | 52 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N05HDT4 | 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
| MTB60N05HD | 60 A, 50 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTB52N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 52A 3-Pin(2+Tab) D2PAK T/R |
| MTB55N03N3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:30V N-Channel Logic Level Enhancement Mode MOSFET |
| MTB55N06Z | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MTB55N06ZT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTB55N10Q8 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:N -Channel Logic Level Enhancement Mode Power MOSFET |
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