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參數(shù)資料
| 型號： | MTB29N15ET4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418B-03, D2PAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 241K |
| 代理商： | MTB29N15ET4 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MTB29N15E/D
MTB29N15E
Preferred Device
Power MOSFET
29 Amps, 150 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls. These devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
VDSS
150
Vdc
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
150
Vdc
GatetoSource Voltage
Continuous
NonRepetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp ≤ 10 μs)
ID
IDM
29
19
102
Adc
Apk
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD
125
1.0
2.5
Watts
W/°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 29 Apk, L = 1.0 mH, RG = 25 Ω)
EAS
421
mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient (Note 1.)
RθJC
RθJA
1.0
62.5
50
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10
seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
29 AMPERES
150 VOLTS
RDS(on) = 70 mΩ
Device
Package
Shipping
ORDERING INFORMATION
MTB29N15E
D2PAK
50 Units/Rail
D2PAK
CASE 418B
STYLE 2
1
2
3
4
http://onsemi.com
NChannel
D
S
G
MARKING DIAGRAM
& PIN ASSIGNMENT
T29N15E
YWW
T29N15E
= Device Code
Y
= Year
WW
= Work Week
MTB29N15ET4
D2PAK
800/Tape & Reel
1
Gate
4
Drain
2
Drain
3
Source
Preferred devices are recommended choices for future use
and best overall value.
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