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參數(shù)資料
| 型號： | MTB50N06VLT4 |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 249K |
| 代理商： | MTB50N06VLT4 |
1
Motorola TMOS Power MOSFET Transistor Device Data
Designer's Data Sheet
TMOS V
Power Field Effect Transistor
D2PAK for Surface Mount
N–Channel Enhancement–Mode Silicon Gate
TMOS V is a new technology designed to achieve an on–resistance
area product about one–half that of standard MOSFETs. This new
technology more than doubles the present cell density of our 50
and 60 volt TMOS devices. Just as with our TMOS E–FET designs,
TMOS V is designed to withstand high energy in the avalanche and
commutation modes. Designed for low voltage, high speed
switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients.
New Features of TMOS V
On–resistance Area Product about One–half that of Standard
MOSFETs with New Low Voltage, Low RDS(on) Technology
Faster Switching than E–FET Predecessors
Features Common to TMOS V and TMOS E–FETs
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
Static Parameters are the Same for both TMOS V and
TMOS E–FET
Surface Mount Package Available in 16 mm 13–inch/2500 Unit
Tape & Reel, Add T4 Suffix to Part Number
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M)
VDGR
60
Vdc
Gate–to–Source Voltage — Continuous
Gate–Source Voltage
— Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
±15
±20
Vdc
Vpk
Drain Current — Continuous @ 25
°C
Drain Current — Continuous @ 100
°C
Drain Current — Single Pulse (tp ≤ 10 s)
ID
IDM
42
30
147
Adc
Apk
Total Power Dissipation @ 25
°C
Derate above 25
°C
Total Power Dissipation @ TA = 25°C (1)
PD
125
0.83
3.0
Watts
W/
°C
Watts
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 175
°C
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C
(VDD = 25 Vdc, VGS = 5 Vdc, PEAK IL = 42 Apk, L = 0.3 mH, RG = 25 )
EAS
265
mJ
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (1)
R
θJC
R
θJA
R
θJA
1.2
62.5
50
°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″ from Case for 10 seconds
TL
260
°C
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTB50N06VL/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TM
MTB50N06VL
TMOS POWER FET
42 AMPERES
60 VOLTS
RDS(on) = 0.032 OHM
CASE 418B–02, Style 2
D2PAK
D
S
G
Motorola Preferred Device
Motorola, Inc. 1996
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MTB50N06VT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 42A 3-Pin(2+Tab) D2PAK T/R |
| MTB50P03HDL | 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50P03HDLG | 功能描述:MOSFET PFET 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50P03HDLT4 | 功能描述:MOSFET 30V 50A Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTB50P03HDLT4G | 功能描述:MOSFET PFET D2PAK 30V 50A 25mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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