- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224506 > MT9KDF12872PZ-1G6XX 128M X 72 DDR DRAM MODULE, DMA240 PDF資料下載
參數(shù)資料
| 型號： | MT9KDF12872PZ-1G6XX |
| 元件分類： | DRAM |
| 英文描述： | 128M X 72 DDR DRAM MODULE, DMA240 |
| 封裝： | HALOGEN FREE, MO-269, RDIMM-240 |
| 文件頁數(shù)： | 5/25頁 |
| 文件大?。?/td> | 401K |
| 代理商： | MT9KDF12872PZ-1G6XX |
IDD Specifications
Table 11: DDR3 IDD Specifications and Conditions – 1GB
Values are for the MT41K128M8 DDR3 SDRAM only and are computed from values specified in the 1.35V 1Gb (128 Meg x
8) component data sheet
Parameter
Symbol
1600
1333
1066
Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE
IDD0
TBD
855
765
mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
IDD1
TBD
990
900
mA
Precharge power-down current: Slow exit
IDD2P
TBD
90
72
mA
Precharge power-down current: Fast exit
IDD2P
TBD
270
225
mA
Precharge quiet standby current
IDD2Q
TBD
495
405
mA
Precharge standby current
IDD2N
TBD
495
405
mA
Precharge standby ODT current
IDD2NT
TBD
675
585
mA
Active power-down current
IDD3P
TBD
333
270
mA
Active standby current
IDD3N
TBD
540
450
mA
Burst read operating current
IDD4R
TBD
1305
1080
mA
Burst write operating current
IDD4W
TBD
1305
1080
mA
Refresh current
IDD5B
TBD
1665
1575
mA
Self refresh temperature current: MAX TC = 85°C
IDD6
TBD
54
mA
Self refresh temperature current (SRT-enabled): MAX TC
= 95°C
IDD6ET
TBD
81
mA
All banks interleaved read current
IDD7
TBD
3240
2610
mA
Reset current
IDD8
TBD
108
90
mA
Table 12: DDR3 IDD Specifications and Conditions – 2GB
Values are for the MT41K256M8 DDR3 SDRAM only and are computed from values specified in the 1.35V 2Gb (256 Meg x
8) component data sheet
Parameter
Symbol
1600
1333
1066
Units
Operating current 0: One bank ACTIVATE-to-PRE-
CHARGE
IDD0
TBD
mA
Operating current 1: One bank ACTIVATE-to-READ-to-
PRECHARGE
IDD1
TBD
mA
Precharge power-down current: Slow exit
IDD2P
TBD
mA
Precharge power-down current: Fast exit
IDD2P
TBD
mA
Precharge quiet standby current
IDD2Q
TBD
mA
Precharge standby current
IDD2N
TBD
mA
Precharge standby ODT current
IDD2NT
TBD
mA
Active power-down current
IDD3P
TBD
mA
Active standby current
IDD3N
TBD
mA
Burst read operating current
IDD4R
TBD
mA
Burst write operating current
IDD4W
TBD
mA
1GB, 2GB (x72 SR) 240-Pin Halogen-Free 1.35V DDR3 RDIMM
Electrical Specifications
PDF: 09005aef83c0f177
kdf9c128_256x72pz.pdf – Rev. A 08/09
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
2009 Micron Technology, Inc. All rights reserved.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTE-28-T | INTERCONNECTION DEVICE |
| MTE-11-T | INTERCONNECTION DEVICE |
| MTE-35-G | INTERCONNECTION DEVICE |
| MTE-08-T | INTERCONNECTION DEVICE |
| MTE-30-T | INTERCONNECTION DEVICE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT9KDF25672AZ-1G4K1 | 制造商:Micron Technology Inc 功能描述:2GB 256MX72 DDR3 SDRAM MODULE COMMERCIAL PBF VLPDIMM GREEN 1 - Bulk 制造商:Micron Technology Inc 功能描述:MODULE DDR3 2GB EUDIMM |
| MT9KDF25672PZ-1G1D1 | 制造商:Micron Technology Inc 功能描述:2GB 256MX72 DDR3 SDRAM MODULE PBF VLPDIMM GREEN 1.35V REG - Trays |
| MT9KDF25672PZ-1G4D1 | 功能描述:MODULE DDR3 SDRAM 2GB 240RDIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
| MT9KDF25672PZ-1G4DZES | 制造商:Micron Technology Inc 功能描述:MT9KDF25672PZ-1G4DZES - Trays |
| MT9KDF25672PZ-1G4H1 | 制造商:Micron Technology Inc 功能描述:2GB 256MX72 DDR3 SDRAM MODULE PBF DIMM GREEN 1.35V REGISTERE - Trays |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。