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參數(shù)資料
| 型號： | MT5C2565 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | 64K x 4 SRAM MEMORY ARRAY |
| 中文描述： | 64K的× 4的SRAM內(nèi)存陣列 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 122K |
| 代理商： | MT5C2565 |
SRAM
MT5C2565
Austin Semiconductor, Inc.
MT5C2565
Rev. 1.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
1
FEATURES
High Speed: 12, 15, 20, 25, 35, and 45ns
Battery Backup: 2V data retention
Low power standby
High-performance, low-power, CMOS double-metal
process
Single +5V (+10%) Power Supply
Easy memory expansion with CE\
All inputs and outputs are TTL compatible
OPTIONS
Timing
15ns access
20ns access
25ns access
35ns access
45ns access
55ns access
70ns access
MARKING
-15
-20
-25
-35
-45
-55*
-70*
Package(s)
Ceramic DIP (300 mil)
Ceramic LCC
C
EC
No.108
No. 204
Operating Temperature Ranges
Industrial (-40
o
C to +85
o
C)
Military (-55
o
C to +125
o
C)
IT
XT
2V data retention/low power
L
*Electrical characteristics identical to those provided for the 45ns
access devices.
PIN ASSIGNMENT
(Top View)
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-89524
MIL-STD-883
28-Pin DIP (C)
(300 MIL)
GENERAL DESCRIPTION
The Austin Semiconductor SRAM family employs
high-speed, low-power CMOS designs using a four-transistor
memory cell. Austin Semiconductor SRAMs are fabricated
using double-layer metal, double-layer polysilicon
technology.
For flexibility in high-speed memory applications,
Austin Semiconductor offers chip enable (CE\) and output
enable (OE\) capability. These enhancements can place the
outputs in High-Z for additional flexibility in system design.
Writing to these devices is accomplished when write enable
(WE\) and CE\ inputs are both LOW. Reading is accomplished
when WE\ remains HIGH and CE\ and OE\ go LOW. The
device offers a reduced power standby mode when disabled.
This allows system designs to achieve low standby power
requirements.
The “L” version provides an approximate 50 percent
reduction in CMOS standby current (I
SBC2
) over the standard
version.
All devices operate from a single +5V power supply
and all inputs and outputs are fully TTL compatible.
64K x 4 SRAM
SRAM MEMORY ARRAY
For more products and information
please visit our web site at
www.austinsemiconductor.com
28-Pin LCC (EC)
3 2 1 28 27
13 14 15 16 17
V
O
4
5
6
7
8
9
1 0
1 1
1 2
2 6
2 5
2 4
2 3
2 2
2 1
2 0
1 9
1 8
A2
A15
D
W
N
A
A
N
V
N
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
CE\
OE\
Vss
Vcc
A15
A14
A13
A12
A11
A10
NC
NC
DQ4
DQ3
DQ2
DQ1
WE\
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT5C2565-35 | 制造商:MT 功能描述:Static RAM, 64Kx4, 28 Pin, Plastic, DIP |
| MT5C2565C-20/883C | 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube |
| MT5C2565C-20/IT | 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube |
| MT5C2565C-20/XT | 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube |
| MT5C2565C-20L/883C | 制造商:Micross Components 功能描述:SRAM, 256KB - Rail/Tube |
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