參數(shù)資料
型號(hào): MT5C2561
廠(chǎng)商: Austin Semiconductor, Inc
英文描述: MT5C2561 SRAM MEMORY ARRAY
中文描述: MT5C2561的SRAM內(nèi)存陣列
文件頁(yè)數(shù): 3/11頁(yè)
文件大?。?/td> 129K
代理商: MT5C2561
SRAM
MT5C2561
Austin Semiconductor, Inc.
MT5C2561
Rev. 2.5 1/01
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
ABSOLUTE MAXIMUM RATINGS
*
Voltage on Any Pin Relative to Vss..................................-0.5V to +7V
Voltage on Vcc Supply Relative to Vss.............................-0.5V to +7V
Voltage Applied to Q.........................................................-0.5V to +6V
Storage Temperature......................................................-65
o
C to +150
o
C
Power Dissipation..............................................................................1W
Short Circuit Output Current.........................................................50mA
Lead Temperature (soldering 10 seconds)....................................+260
o
C
Junction Temperature..................................................................+175
o
C
*Stresses greater than those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the
operation section of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods
may affect reliability.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS
(-55
o
C < T
C
< 125
o
C; V
CC
= 5V +10%)
DESCRIPTION
CONDITIONS
SYM
V
IH
V
IL
Input Leakage Current
0V<V
IN
<V
CC
IL
I
Output(s) disabled
0V<V
OUT
<V
CC
CAPACITANCE
SYM
-35
-45
UNITS NOTES
I
CCSP
120
120
mA
3
I
CCLP
100
100
mA
3
Power Supply
Current: Standby
I
SBT1
25
25
mA
I
SBCSP
20
20
mA
"L" Version Only
I
SBCLP
3
3
mA
CE\ > V
CC
-0.2V; V
CC
= MAX
V
IL
< V
SS
+0.2V
V
IH
> V
CC
-0.2V; f = 0 Hz
CE\ > V
IH
; All Other Inputs
< V
IL
or > V
IH
, V
CC
= MAX
f = 0 Hz
MAX
CONDITIONS
Power Supply
Current: Operating
PARAMETER
CE\ < V
IL
; V
CC
= MAX
f = MAX = 1/t
RC
(MIN)
Output Open
MIN
2.2
MAX
V
CC
+0.5
0.8
UNITS
V
NOTES
1
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
-0.5
V
1, 2
-10
10
μA
Output Leakage Current
IL
O
-10
10
μA
Output High Voltage
I
OH
= -4.0mA
I
OL
= 8.0mA
V
OH
V
OL
2.4
V
1
Output Low Voltage
0.4
V
1
PARAMETER
Input Capacitance
CONDITIONS
SYM
C
I
MAX
10
UNITS
pF
NOTES
4
Output Capacitance
C
O
12
pF
4
T
A
= 25
o
C, f = 1MHz
Vcc = 5V
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