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參數(shù)資料
| 型號： | MT58L128V36P1B-4 |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 STANDARD SRAM, 2.3 ns, PBGA119 |
| 封裝： | 14 X 22 MM, PLASTIC, MS-028BHA, BGA-119 |
| 文件頁數(shù)： | 5/35頁 |
| 文件大小： | 353K |
| 代理商： | MT58L128V36P1B-4 |
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13
4Mb: 256K x 18, 128K x 32/36 Pipelined, SCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L256L18P1_D.p65 – Rev. 10/01
2001, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
PIPELINED, SCD SYNCBURST SRAM
BGA PIN DESCRIPTIONS
x 1 8
x32/x36
SYMBOL TYPE
DESCRIPTION
4P
SA0
Input
Synchronous Address Inputs: These inputs are registered and
4N
SA1
must meet the setup and hold times around the rising edge
2A, 3A, 5A,
2A, 2C, 2R,
S A
of CLK.
6A, 3B, 5B,
3A, 3B, 3C,
2C, 3C, 5C,
3T, 4T, 5A,
6C, 2R, 6R,
5B, 5C, 5T,
2T, 3T, 5T, 6T
6A, 6C, 6R
5 L
BWa#
Input
Synchronous Byte Write Enables: These active LOW inputs allow
3 G
5 G
BWb#
individual bytes to be written and must meet the setup and hold
–
3 G
BWc#
times around the rising edge of CLK. A byte write enable is LOW
–
3 L
BWd#
for a WRITE cycle and HIGH for a READ cycle. For the x18 version,
BWa# controls DQa’s and DQPa; BWb# controls DQb’s and DQPb.
For the x32 and x36 versions, BWa# controls DQa’s and DQPa;
BWb# controls DQb’s and DQPb; BWc# controls DQc’s and DQPc;
BWd# controls DQd’s and DQPd. Parity is only available on the x18
and x36 versions.
4 M
BWE#
Input
Byte Write Enable: This active LOW input permits BYTE WRITE
operations and must meet the setup and hold times around the
rising edge of CLK.
4 H
GW#
Input
Global Write: This active LOW input allows a full 18-, 32- or 36-bit
WRITE to occur independent of the BWE# and BWx# lines and must
meet the setup and hold times around the rising edge of CLK.
4K
CLK
Input
Clock: This signal registers the address, data, chip enable, byte write
enables and burst control inputs on its rising edge. All synchronous
inputs must meet setup and hold times around the clock’s rising
edge.
4E
CE#
Input
Synchronous Chip Enable: This active LOW input is used to enable
the device and conditions the internal use of ADSP#. CE# is sampled
only when a new external address is loaded.
6 B
CE2#
Input
Synchronous Chip Enable: This active LOW input is used to enable
the device and is sampled only when a new external address is
loaded.
7T
ZZ
Input
Snooze Enable: This active HIGH, asynchronous input causes the
device to enter a low-power standby mode in which all data in the
memory array is retained. When ZZ is active, all other inputs are
ignored.
2 B
CE2
Input
Synchronous Chip Enable: This active HIGH input is used to enable
the device and is sampled only when a new external address is
loaded.
4 F
OE#
Input
Output Enable: This active LOW, asynchronous input enables the
data I/O output drivers.
4 G
ADV#
Input
Synchronous Address Advance: This active LOW input is used to
advance the internal burst counter, controlling burst access after the
external address is loaded. A HIGH on ADV# effectively causes wait
states to be generated (no address advance). To ensure use of
correct address during a WRITE cycle, ADV# must be HIGH at the
rising edge of the first clock after an ADSP# cycle is initiated.
(continued on next page)
相關PDF資料 |
PDF描述 |
|---|---|
| MT58L32L36PT-7.5 | 32K X 36 CACHE SRAM, 4.2 ns, PQFP100 |
| MT58L512L18DS-7.5IT | 512K X 18 CACHE SRAM, 4 ns, PQFP100 |
| MT58L512L18DT-10IT | 512K X 18 CACHE SRAM, 5 ns, PQFP100 |
| MT58L512L18PB-6IT | 512K X 18 STANDARD SRAM, 3.5 ns, PBGA119 |
| MT58L512L18PS-7.5IT | 512K X 18 CACHE SRAM, 4 ns, PQFP100 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L128V36P1F-5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128V36P1F-6 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128V36P1T-7.5 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L1MV18D | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM |
| MT58L1MY18D | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:16Mb SYNCBURST⑩ SRAM |
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