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參數(shù)資料
| 型號(hào)： | MT58L128L36D1T-5IT |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 128K X 36 STANDARD SRAM, 2.8 ns, PQFP100 |
| 封裝： | PLASTIC, MS-026BHA, TQFP-100 |
| 文件頁(yè)數(shù)： | 7/23頁(yè) |
| 文件大?。?/td> | 604K |
| 代理商： | MT58L128L36D1T-5IT |
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4Mb: 256K x 18, 128K x 32/36 3.3V I/O Pipelined, DCD SyncBurst SRAM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT58L256L18D1.p65 – Rev 12/99
1999, Micron Technology, Inc.
4Mb: 256K x 18, 128K x 32/36
3.3V I/O PIPELINED, DCD SYNCBURST SRAM
PRELIMINARY
TQFP CAPACITANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
NOTES
Control Input Capacitance
T
A = 25°C; f = 1 MHz;
CI
34
pF
4
Input/Output Capacitance (DQ)
VDD = 3.3V
CO
45
pF
4
Address Capacitance
CA
3
3.5
pF
4
Clock Capacitance
CCK
3
3.5
pF
4
NOTE: 1. IDD is specified with no output current and increases with faster cycle times. IDDQ increases with faster cycle times and
greater output loading.
2. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
3. Typical values are measured at 3.3V, 25
°C and 10ns cycle time.
4. This parameter is sampled.
BGA CAPACITANCE
DESCRIPTION
CONDITIONS
SYMBOL
TYP
MAX
UNITS
NOTES
Address/Control Input Capacitance
CI
47
pF
4
Input/Output Capacitance (DQ)
T
A = 25°C; f = 1 MHz
CO
4.5
5.5
pF
4
Address Capacitance
CA
47
pF
4
Clock Capacitance
CCK
4.5
5.5
pF
4
MAX
IDD OPERATING CONDITIONS AND MAXIMUM LIMITS
(0
°C ≤ T
A ≤ +70°C; VDD, VDDQ = +3.3V +0.3V/-0.165V unless otherwise noted)
DESCRIPTION
CONDITIONS
SYM
TYP
-5
-6
-7.5
-10
UNITS NOTES
Power Supply
Device selected; All inputs
≤ VIL
Current:
or
≥ VIH; Cycle time ≥ tKC MIN;
IDD
225
525
475
375
300
mA
1, 2, 3
Operating
VDD = MAX; Outputs open
Power Supply
Device selected; VDD = MAX;
Current: Idle
ADSC#, ADSP#, GW#, BWx#, ADV#
≥
IDD1
55
120
110
90
85
mA
1, 2, 3
VIH; All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time
≥ tKC MIN
CMOS Standby
Device deselected; VDD = MAX;
All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
ISB2
0.4
10
mA
2, 3
All inputs static; CLK frequency = 0
TTL Standby
Device deselected; VDD = MAX;
All inputs
≤ VIL or ≥ VIH;ISB3
8
25252525
mA
2, 3
All inputs static; CLK frequency = 0
Clock Running
Device deselected; VDD = MAX;
ADSC#, ADSP#, GW#, BWx#, ADV#
≥
ISB4
55
120
110
90
85
mA
2, 3
VIH; All inputs
≤ VSS + 0.2 or ≥ VDD - 0.2;
Cycle time
≥ tKC MIN
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT58L128L36F1 | 制造商:MICRON 制造商全稱(chēng):Micron Technology 功能描述:4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH SYNCBURST SRAM |
| MT58L128L36F1T-10 | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Quad 3.3V 4M-Bit 128K x 36 10ns 100-Pin TQFP 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MT58L128L36F1T-10 TR | 制造商:Cypress Semiconductor 功能描述:128KX36 SRAM PLASTIC TQFP 3.3V |
| MT58L128L36F1T-8.5 | 制造商:Cypress Semiconductor 功能描述:128KX36 SRAM PLASTIC TQFP 3.3V 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Micron Technology Inc 功能描述: |
| MT58L128L36F1T-8.5C | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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