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參數(shù)資料
| 型號(hào)： | MT4S34U |
| 廠商： | Toshiba Corporation |
| 英文描述： | SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APLICATIONS. |
| 中文描述： | 瑞展硅型甚高頻，超高頻波段低噪聲放大器APLICATIONS。 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | MT4S34U |
TOSHIBA
MT4S34U
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
MT4S34U
VHF-UHF BAND LOW NOISE AMPLIFIER APLICATIONS.
- Low Noise : Figure : NF=1.2dB(at f=2GHz)
- High Gain : |S21e|
2
=14dB(at f=2GHz)
MAXIMUM RATINGS (Ta=25deg.)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
6
V
Collector-Emitter Voltage
V
CEO
3
V
Emitter-Base Voltage
V
EBO
I
C
I
B
P
C
T
j
T
stg
1.5
V
Collector-Current
36
mA
Base Current
12
mA
Collector Power Dissipation
100
mW
Junction Temperature
125
deg
Storage Temperature Range
-55-125
deg.
MARKING
MICROWAVE CHARACTERISTICS(Ta=25deg.)
CHARACTERISTIC
SYMBOL
f
T
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Transition Frequency
V
CE
=2V
I
C
=20mA
15
19
-
GHz
Insertion Gain
S
21e
2
V
CE
=2V
I
C
=20mA
f=2GHz
12
14
17
dB
Noise Figure
NF
V
CE
=2V
I
C
=5mA
f=2GHz
-
1.2
TBD
dB
ELECTRICAL CHARACTERISTICS(Ta=25deg.)
CHARACTERISTIC
SYMBOL
I
CBO
I
EBO
h
FE
Cob
Cre
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
V
CB
=6V
I
E
=0
-
-
1
uA
Emitter Cut-off Current
V
EB
=1V
I
C
=0
-
-
1
uA
DC Current Gain
V
CE
=2V
I
C
=20mA
TBD
TBD
TBD
-
Output Capacitance
-
0.4
-
pF
Reverse Transistor Capacitance
V
CB
=2V
I
E
=0
f=1MHz (Note)
-
0.2
-
pF
NOTE : C
re
is measured by 3 terminal method with capacitance bridge
CAUTION
This device is sensitive to electrostatic discharge. Please make each tool and equipment earthed when you handle.
1.25
1.BASE
2.EMITTER
3.COLLECTOR
4.EMITTER
JEDEC -
EIAJ -
TOSHIBA
0
2
0
1
0
0
0
2.1
0.1
0.1
0
0
0
0
+
-
+
-
1
2
4
3
2 1
3 4
Tentative
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