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參數(shù)資料
| 型號： | MT6L55E |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2N1C, 6 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 65K |
| 代理商： | MT6L55E |
MT6L55E
2001-08-24
1
TOSHIBA Transistor
Silicon NPN Epitaxial Planar Type
M T 6 L 5 5 E
VHF-UHF Band Low Noise Amplifier Application
VHF-UHF Band Oscillator Application
Two devices are built into the super-thin and ultra-super-mini (6-pin)
ES6 package.
Mounted Devices
Q1: SSM (TESM)
Q2: TESM
Three-pin (SSM/TESM) product No.
MT3S07S
(MT3S07T)
MT3S005T
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Q1
Q2
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
1.5
2
V
Collector current
IC
25
40
mA
Base current
IB
10
mA
Collector power dissipation
PC (Note 1)
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note 1: Total power dissipation of Q1 and Q2 mounted on the circuit board
Marking
Pin Connections
Unit : mm
JEDEC
JEITA
TOSHIBA
2-2N1C
Weight: 3 mg (typ.)
Preliminary
B1
B2
C1
E1
C2
Q1
Q2
E2
A
R
4
6
3
1
2
5
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