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39
256Mb: x4, x8, x16 SDRAM
256MSDRAM_E.p65
–
Rev. E; Pub. 3/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
256Mb: x4, x8, x16
SDRAM
specified as a reference only at minimum cycle rate.
16. Timing actually specified by
t
WR.
17. Required clocks are specified by JEDEC function-
ality and are not dependent on any timing param-
eter.
18. The I
DD
current will increase or decrease propor-
tionally according to the amount of frequency al-
teration for the test condition.
19. Address transitions average one transition every
two clocks.
20. CLK must be toggled a minimum of two times dur-
ing this period.
21.Based on
t
CK = 7.5ns for -75 and -7E.
22. V
IH
overshoot: V
IH
(MAX) = V
DD
Q + 2V for a pulse
width
≤
3ns, and the pulse width cannot be
greater than one third of the cycle rate. V
IL
under-
shoot: V
IL
(MIN) = -2V for a pulse width
≤
3ns.
23. The clock frequency must remain constant (stable
clock is defined as a signal cycling within timing
constraints specified for the clock pin) during ac-
cess or precharge states (READ, WRITE, including
t
WR, and PRECHARGE commands). CKE may be
used to reduce the data rate.
24. Auto precharge mode only. The precharge timing
budget (
t
RP) begins 7ns for -7E and 7.5ns for -75
after the first clock delay, after the last WRITE is
executed. May not exceed limit set for precharge
mode.
25. Precharge mode only.
26. JEDEC and PC100 specify three clocks.
27.
t
AC for -75/-7E at CL = 3 with no load is 4.6ns and is
guaranteed by design.
28. Parameter guaranteed by design.
29. PC100 specifies a maximum of 4pF.
30. PC100 specifies a maximum of 5pF.
31. PC100 specifies a maximum of 6.5pF.
32. For -75, CL = 3 and
t
CK = 7.5ns; for -7E, CL = 2 and
t
CK = 7.5ns.
33. CKE is HIGH during refresh command period
t
RFC (MIN) else CKE is LOW. The I
DD
6 limit is actu-
ally a nominal value and does not result in a fail
value.
34. PC133 specifies a minimum of 2.5pF.
35. PC133 specifies a minimum of 2.5pF.
36. PC133 specifies a minimum of 3.0pF.
NOTES
1.
All voltages referenced to V
SS
.
2.
This parameter is sampled. V
DD
, V
DD
Q = +3.3V;
f = 1 MHz, T
A
= 25°C; pin under test biased at 1.4V.
3.
I
DD
is dependent on output loading and cycle rates.
Specified values are obtained with minimum cycle
time and the outputs open.
4.
Enables on-chip refresh and address counters.
5.
The minimum specifications are used only to
indicate cycle time at which proper operation over
the full temperature range is ensured; (0°C
≤
T
A
≤
+70°C for commercial) and (-40°C
≤
T
A
≤
+85°C
for IT).
6.
An initial pause of 100μs is required after power-
up, followed by two AUTO REFRESH commands,
before proper device operation is ensured. (V
DD
and V
DD
Q must be powered up simultaneously. V
SS
and V
SS
Q must be at same potential.) The two AUTO
REFRESH command wake-ups should be repeated
any time the
t
REF refresh requirement is exceeded.
7.
AC characteristics assume
t
T = 1ns.
8.
In addition to meeting the transition rate specifi-
cation, the clock and CKE must transit between V
IH
and V
IL
(or between V
IL
and V
IH
) in a monotonic
manner.
9.
Outputs measured at 1.5V with equivalent load:
Q
50pF
10.
t
HZ defines the time at which the output achieves
the open circuit condition; it is not a reference to
V
OH
or V
OL
. The last valid data element will meet
t
OH before going High-Z.
11. AC operating and I
DD
test conditions have V
IL
= 0V
and V
IH
= 3.0V using a measurement reference level
of 1.5V. If the input transition time is longer than
1ns, then the timing is measured from V
IL
(MAX)
and V
IH
(MIN) and no longer from the 1.5V mid-
point. Refer to Micron Technical Note TN-48-09.
12. Other input signals are allowed to transition no
more than once every two clocks and are otherwise
at valid V
IH
or V
IL
levels.
13. I
DD
specifications are tested after the device is prop-
erly initialized.
14. Timing actually specified by
t
CKS; clock(s) speci-
fied as a reference only at minimum cycle rate.
15. Timing actually specified by
t
WR plus
t
RP; clock(s)