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參數(shù)資料
| 型號： | MT3S08T |
| 廠商： | Toshiba Corporation |
| 英文描述： | VHF-UHF Band Low Noise Amplifier Application |
| 中文描述： | 甚高頻，超高頻波段低噪聲放大器的應用 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 87K |
| 代理商： | MT3S08T |
MT6L54E
2003-07-11
2
Electrical Characteristics Q1-Side
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
5 V, I
E
=
0
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
=
1 V, I
C
=
0
1
μ
A
DC current gain
h
FE
V
CE
=
1 V, I
C
=
5 mA
70
140
Transition frequency
f
T
V
CE
=
3 V, I
C
=
5 mA
7
10
GHz
S
21e
2
(1)
V
CE
=
1 V, I
C
=
5 mA, f
=
2 GHz
7.5
Insertion gain
S
21e
2
(2)
V
CE
=
3 V, I
C
=
7 mA, f
=
2 GHz
4.5
8
dB
NF (1)
V
CE
=
1 V, I
C
=
3 mA, f
=
2 GHz
1.7
3
Noise figure
NF (2)
V
CE
=
3 V, I
C
=
3 mA, f
=
2 GHz
1.6
3
dB
Reverse transfer capacitance
C
re
V
CB
=
1 V, I
E
=
0, f
=
1 MHz
0.35
0.75
pF
Electrical Characteristics Q2-Side
(Ta
=
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
10 V, I
E
=
0
0.1
μ
A
Emitter cut-off current
I
EBO
V
EB
=
1 V, I
C
=
0
1
μ
A
DC current gain
h
FE
V
CE
=
1 V, I
C
=
5 mA
80
140
Transition frequency
f
T
V
CE
=
1 V, I
C
=
5 mA
2
4.5
GHz
S
21e
2
(1)
V
CE
=
1 V, I
C
=
5 mA, f
=
1 GHz
9.5
Insertion gain
S
21e
2
(2)
V
CE
=
3 V, I
C
=
20 mA, f
=
1 GHz
9.5
12.5
dB
Noise figure
NF
V
CE
=
1 V, I
C
=
5 mA, f
=
1 GHz
1.4
2.5
dB
Reverse transfer capacitance
C
re
V
CB
=
1 V, I
E
=
0, f
=
1 MHz
0.55
0.95
pF
Caution
This device electrostatic sensitivity. Please handle with caution.
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