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參數(shù)資料
| 型號(hào)： | MT3S03AS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2H1A, SSM, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 123K |
| 代理商： | MT3S03AS |
MT3S03AS
2003-08-08
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S03AS
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.4dB (f = 2 GHz)
High gain: Gain = 8dB (f = 2 GHz)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
10
V
Collector-emitter voltage
VCEO
5
V
Emitter-base voltage
VEBO
2
V
Base current
IC
40
mA
Collector current
IB
10
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Marking
Microwave Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
fT (1)
VCE = 1 V, IC = 5 mA
5
7
Transition frequency
fT (2)
VCE = 3 V, IC = 10 mA
7
10
GHz
S21e
2 (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
5.5
Insertion gain
S21e
2 (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
6
8
dB
NF (1)
VCE = 1 V, IC = 5 mA, f = 2 GHz
1.7
3
Noise figure
NF (2)
VCE = 3 V, IC = 7 mA, f = 2 GHz
1.4
2.2
dB
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 0.0024 g (typ.)
Preliminary
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT3S03AT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S03AT_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
| MT3S03AU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE |
| MT3S04AFS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low-Noise Amplifier Applications |
| MT3S04AS | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON NPN EPITAXIAL PLANAR TYPE |
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