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參數(shù)資料
| 型號(hào)： | MT3S05FS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-1E1A, FSM, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 256K |
| 代理商： | MT3S05FS |
MT3S05FS
2005-07-05
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT3S05FS
VHF~UHF Band Low-Noise Amplifier Applications
VHF~UHF Band Oscillator Applications
Superior performance in oscillator applications
Superior noise characteristics
: NF = 1.4 dB, |S21e|
2 = 8.5 dB (f = 1 GHz)
Lead (Pb)-free.
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Collector- base voltage
VCBO
10
V
Collector- emitter voltage
VCEO
5
V
Emitter- base voltage
VEBO
2
V
Collector current
IC
40
mA
Base current
IB
10
mW
Collector power dissipation
PC(Note)
85
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Note: 10 mm
2 × 1.0 mm (t),mounted on a glass-epoxy printed circuit board.
Marking
Unit: mm
1.Base
2.Emitter
3.Collector
JEDEC
―
JEITA
―
Toshiba
2-1E1A
Weight: 0.0006 g (typ.)
2
1
3
0 2
fSM
0.2±
0.
05
0.1±0.05
3
0.8±0.05
1.0±0.05
0.15±
0.05
0.
35
±0
.0
5
0.
6±
0.
05
1
2
0.1±0.05
0.48
+0
.0
2
-0
.0
4
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| MT3S05T | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF~UHF Band Low Noise Amplifier Applications |
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