- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄384755 > MT16LSDT6464AI (Micron Technology, Inc.) SYNCHRONOUS DRAM MODULE PDF資料下載
參數(shù)資料
| 型號(hào)： | MT16LSDT6464AI |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM MODULE |
| 中文描述： | 同步DRAM模塊 |
| 文件頁(yè)數(shù)： | 19/24頁(yè) |
| 文件大?。?/td> | 614K |
| 代理商： | MT16LSDT6464AI |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)當(dāng)前第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)
256MB / 512MB (x64)
168-PIN SDRAM DIMMs
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
19
2002, Micron Technology Inc.
Table 18: EEPROM Device Select Code
The most significant bit (b7) is sent first
DEVICE TYPE IDENTIFIER
CHIP ENABLE
RW
b7
b6
b5
b4
b3
b2
b1
b0
Memory Area Select Code (two arrays)
Protection Register Select Code
1
0
0
1
1
1
0
0
SA2
SA2
SA1
SA1
SA0
SA0
RW
RW
Table 19: EEPROM Operating Modes
MODE
RW BIT
WC
BYTES
INITIAL SEQUENCE
Current Address Read
RandomAddressRead
1
0
1
1
0
0
V
IH
or V
IL
V
IH
or V
IL
V
IH
or V
IL
V
IH
or V
IL
V
IL
V
IL
1
Start, Device Select, RW = 1
Start, Device Select, RW= 0, Address
RESTART, Device Select, RW= 1
Similar to Current or Random Address Read
START, Device Select, RW = 0
START, Device Select, RW = 0
1
Sequential Read
Byte Write
Page Write
1
1
16
Table 20: SERIAL Presence-Detect EEPROM DC Operating Conditions
V
DD
= +3.3V ±0.3V; All voltages referenced to V
SS
PARAMETER/CONDITION
SYMBOL
MIN
MAX
UNITS
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
OUTPUT LOW VOLTAGE: I
OUT
= 3mA
INPUT LEAKAGE CURRENT: V
IN
= GND to V
DD
OUTPUT LEAKAGE CURRENT: V
OUT
= GND to V
DD
STANDBY CURRENT: SCL = SDA = V
DD
- 0.3V; All other
inputs = GND or 3.3V ±10%
POWER SUPPLY CURRENT:
SCL Clock frequency = 100 KHz
V
DD
V
IH
V
IL
V
OL
I
LI
I
LO
I
CCS
3
3.6
V
V
V
V
V
DD
x 0.7
-1
–
–
–
–
V
DD
+ 0.5
V
DD
x 0.3
0.4
10
10
30
μA
μA
μA
I
CC
Write
I
CC
Read
–
–
3
1
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT28F016S5VG-9 | 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY |
| MT28F160S3 | 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲(chǔ)器) |
| MT28F640J3 | 64Mb Flash Memory(64Mb閃速存儲(chǔ)器) |
| MT35212A | BELL 212A/CCITT V.22 Modem Filter |
| MT35212AE | BELL 212A/CCITT V.22 Modem Filter |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT16LSDT6464AI-133C2 | 制造商:Micron Technology Inc 功能描述:512MB 64MX64 SYNCH DRAM MODULE IND TEMP DIMM 3.3V NON BUF - Trays |
| MT16LSDT6464AI-133D2 | 制造商:Micron Technology Inc 功能描述:512MB 64MX64 SDRAM MODULE IND TEMP SODIMM 3.3V NON BUF - Trays |
| MT16LSDT6464AY-133D2 | 功能描述:MODULE SDRAM 512MB 168-DIMM RoHS:是 類別:存儲(chǔ)卡，模塊 >> 存儲(chǔ)器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
| MT16LSDT6464AY-13ED2 | 功能描述:MODULE SDRAM 512MB 168-DIMM RoHS:是 類別:存儲(chǔ)卡，模塊 >> 存儲(chǔ)器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲(chǔ)器類型:SDRAM 存儲(chǔ)容量:1GB 速度:133MHz 特點(diǎn):- 封裝/外殼:168-DIMM |
| MT16LSDT6464AY-13EG1 | 制造商:Micron Technology Inc 功能描述:512MB 64MX64 SDRAM MODULE COMMERCIAL PBF DIMM GREEN 3.3V NON - Bulk |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。