- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄384755 > MT16LSDT6464AI (Micron Technology, Inc.) SYNCHRONOUS DRAM MODULE PDF資料下載
參數(shù)資料
| 型號： | MT16LSDT6464AI |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM MODULE |
| 中文描述： | 同步DRAM模塊 |
| 文件頁數(shù)： | 13/24頁 |
| 文件大小： | 614K |
| 代理商： | MT16LSDT6464AI |
256MB / 512MB (x64)
168-PIN SDRAM DIMMs
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
13
2002, Micron Technology Inc.
NOTE:
a - Value calculated as one module bank in this condition, and all other module banks in Power-Down Mode (I
DD
2).
b - Value calculated reflects all module banks in this condition.
Table 12: I
DD
Specifications and Conditions – 256MB Module
Notes: 1, 5, 6, 11, 13; notes appear on page 17; V
DD
, V
DDQ
= +3.3v ±0.3v; SDRAM component values only
MAX
PARAMETER/CONDITION
SYMBOL
-13E
-133 -10E
UNITS
NOTES
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
STANDBY CURRENT: Active Mode;CKE = HIGH; CS# = HIGH; All
device banks active after
t
RCD met; No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
I
DD
1
1,080
1,080 1,080
mA
3, 18,19, 22
I
DD
2
16
16
16
mA
22
I
DD
3
320
320
320
mA
3, 12, 19, 22
I
DD
4
1,080
1,080 1,080
mA
3, 18, 19, 22
t
RFC =
t
RFC (MIN)
t
RFC = 7.8125μs
I
DD
5
2,280
2,160 2,160
mA
3, 12
CKE = HIGH; CS# = HIGH
I
DD
6
28
28
28
mA
18, 19, 22, 31
SELF REFRESH CURRENT: CKE 0.2V
I
DD
7
20
20
20
mA
4
Table 13: I
DD
Specifications and Conditions – 512MB Module
Notes: 1, 6, 11, 13; notes appear on page 17; V
DD
, V
DDQ
= +3.3V ±0.3V; SDRAM component values only
MAX
PARAMETER/CONDITION
SYMBOL
-13E
-133 -10E
UNITS
NOTES
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
t
RCD met; No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
I
DD
1
a
1,096
1,016 1,016
mA
3, 18,19, 22
I
DD
2
b
32
32
32
mA
22
I
DD
3
a
336
336
336
mA
3, 12, 19, 22
I
DD
4
a
1,096
1,096 1,096
mA
3, 18, 19, 22
t
RFC =
t
RFC (MIN)
t
RFC = 7.8125μs
I
DD
5
b
I
DD
6
b
I
DD
7
b
4,560
4,320 4,320
mA
3, 12
CKE = HIGH; CS# = HIGH
56
56
56
mA
18, 19, 22, 31
SELF REFRESH CURRENT: CKE 0.2V
40
40
40
mA
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT28F016S5VG-9 | 2 MEG x 8 SMART 5 EVEN-SECTORED FLASH MEMORY |
| MT28F160S3 | 2 Meg x 8/1 Meg x 16 Smart 3 Flash(2 M x 8/1 M x 16閃速存儲器) |
| MT28F640J3 | 64Mb Flash Memory(64Mb閃速存儲器) |
| MT35212A | BELL 212A/CCITT V.22 Modem Filter |
| MT35212AE | BELL 212A/CCITT V.22 Modem Filter |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT16LSDT6464AI-133C2 | 制造商:Micron Technology Inc 功能描述:512MB 64MX64 SYNCH DRAM MODULE IND TEMP DIMM 3.3V NON BUF - Trays |
| MT16LSDT6464AI-133D2 | 制造商:Micron Technology Inc 功能描述:512MB 64MX64 SDRAM MODULE IND TEMP SODIMM 3.3V NON BUF - Trays |
| MT16LSDT6464AY-133D2 | 功能描述:MODULE SDRAM 512MB 168-DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT16LSDT6464AY-13ED2 | 功能描述:MODULE SDRAM 512MB 168-DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
| MT16LSDT6464AY-13EG1 | 制造商:Micron Technology Inc 功能描述:512MB 64MX64 SDRAM MODULE COMMERCIAL PBF DIMM GREEN 3.3V NON - Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。