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參數資料
| 型號： | MT16LSDT6464AGI-133 |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM MODULE |
| 中文描述： | 同步DRAM模塊 |
| 文件頁數： | 22/24頁 |
| 文件大小： | 614K |
| 代理商： | MT16LSDT6464AGI-133 |
256MB / 512MB (x64)
168-PIN SDRAM DIMMs
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
22
2002, Micron Technology Inc.
NOTE:
1. The value of
t
RAS used for -13E modules is calculated from
t
RC -
t
RP. Actual device spec. value is 37ns.
31
32
MODULE BANK DENSITY
COMMAND AND ADDRESS SETUP TIME,
t
AS,
t
CMS
256MB
40
15
20
08
10
15
20
08
10
00
12
8B
D1
19
2C
FF
40
15
20
08
10
15
20
08
10
00
12
8C
D2
1A
2C
FF
1.5ns (-13E/-133)
2ns (-10E)
0.8ns (-13E/-133)
1ns (-10E)
1.5ns (-13E/-133)
2ns (-10E)
0.8ns (-13E/-133)
1ns (-10E)
33
COMMAND AND ADDRESS HOLD TIME,
t
AH,
t
CMH
34
DATA SIGNAL INPUT SETUP TIME,
t
DS
35
DATA SIGNAL INPUT HOLD TIME,
t
DH
36-61
62
63
RESERVED
SPD REVISION
CHECKSUM FOR BYTES 0-62
REV. 1.2
(-13E)
(-133)
(-10E)
MICRON
64
MANUFACTURER’S JEDEC ID CODE
MANUFACTURER’S JEDEC ID CODE(CONT.)
MANUFACTURING LOCATION
MODULE PART NUMBER (ASCII)
PCB IDENTIFICATION CODE
IDENTIFICATION CODE (CONT.)
YEAR OF MANUFACTURE IN BCD
WEEK OF MANUFACTURE IN BCD
MODULE SERIAL NUMBER
MANUFACTURER-SPECIFIC DATA (RSVD)
SYSTEM FREQUENCY
65-71
72
73-90
91
92
93
94
95-98
99-125
126
01 - 06
01 - 06
Variable Data
01-04
00
Variable Data
Variable Data
Variable Data
Variable Data
01-04
00
Variable Data
Variable Data
Variable Data
0
100 MHz (-13E/
-133/-10E)
64
64
127
SDRAM COMPONENT & CLOCK DETAIL
AF
FF
Table 22: Serial Presence-Detect Matrix (Continued)
V
DD
= +3.3V ±0.3V; “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
BYTE
DESCRIPTION
ENTRY
(VERSION)
MT8LSDT3264A(I)
MT16LSDT6464A(I)
相關PDF資料 |
PDF描述 |
|---|---|
| MT8LSDT3264AG-13E | SYNCHRONOUS DRAM MODULE |
| MT8LSDT3264AI | SYNCHRONOUS DRAM MODULE |
| MT16LSDT6464AG-10E | SYNCHRONOUS DRAM MODULE |
| MT16LSDT6464AG-133 | SYNCHRONOUS DRAM MODULE |
| MT16LSDT6464AG-13E | SYNCHRONOUS DRAM MODULE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MT16LSDT6464AGY-133C2 | 制造商:Micron Technology Inc 功能描述:512MB 64MX64 SYNCH DRAM MODULE PBF DIMM 3.3V NON BUF - Trays |
| MT16LSDT6464AI | 制造商:MICRON 制造商全稱:Micron Technology 功能描述:SYNCHRONOUS DRAM MODULE |
| MT16LSDT6464AI-133C2 | 制造商:Micron Technology Inc 功能描述:512MB 64MX64 SYNCH DRAM MODULE IND TEMP DIMM 3.3V NON BUF - Trays |
| MT16LSDT6464AI-133D2 | 制造商:Micron Technology Inc 功能描述:512MB 64MX64 SDRAM MODULE IND TEMP SODIMM 3.3V NON BUF - Trays |
| MT16LSDT6464AY-133D2 | 功能描述:MODULE SDRAM 512MB 168-DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標準包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM |
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