參數(shù)資料
型號： MT16LSDT6464AGI-133
廠商： Micron Technology, Inc.
英文描述： SYNCHRONOUS DRAM MODULE
中文描述： 同步DRAM模塊
文件頁數(shù)： 13/24頁
文件大小： 614K
代理商： MT16LSDT6464AGI-133
256MB / 512MB (x64)
168-PIN SDRAM DIMMs
32,64 Meg x 64 SDRAM DIMMs
SD8_16C32_64x64AG_C.fm - Rev. C 11/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
13
2002, Micron Technology Inc.
NOTE:
a - Value calculated as one module bank in this condition, and all other module banks in Power-Down Mode (I
DD
2).
b - Value calculated reflects all module banks in this condition.
Table 12: I
DD
Specifications and Conditions – 256MB Module
Notes: 1, 5, 6, 11, 13; notes appear on page 17; V
DD
, V
DDQ
= +3.3v ±0.3v; SDRAM component values only
MAX
PARAMETER/CONDITION
SYMBOL
-13E
-133 -10E
UNITS
NOTES
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
STANDBY CURRENT: Active Mode;CKE = HIGH; CS# = HIGH; All
device banks active after
t
RCD met; No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
I
DD
1
1,080
1,080 1,080
mA
3, 18,19, 22
I
DD
2
16
16
16
mA
22
I
DD
3
320
320
320
mA
3, 12, 19, 22
I
DD
4
1,080
1,080 1,080
mA
3, 18, 19, 22
t
RFC =
t
RFC (MIN)
t
RFC = 7.8125μs
I
DD
5
2,280
2,160 2,160
mA
3, 12
CKE = HIGH; CS# = HIGH
I
DD
6
28
28
28
mA
18, 19, 22, 31
SELF REFRESH CURRENT: CKE 0.2V
I
DD
7
20
20
20
mA
4
Table 13: I
DD
Specifications and Conditions – 512MB Module
Notes: 1, 6, 11, 13; notes appear on page 17; V
DD
, V
DDQ
= +3.3V ±0.3V; SDRAM component values only
MAX
PARAMETER/CONDITION
SYMBOL
-13E
-133 -10E
UNITS
NOTES
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
RC =
t
RC (MIN)
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
t
RCD met; No accesses in progress
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
I
DD
1
a
1,096
1,016 1,016
mA
3, 18,19, 22
I
DD
2
b
32
32
32
mA
22
I
DD
3
a
336
336
336
mA
3, 12, 19, 22
I
DD
4
a
1,096
1,096 1,096
mA
3, 18, 19, 22
t
RFC =
t
RFC (MIN)
t
RFC = 7.8125μs
I
DD
5
b
I
DD
6
b
I
DD
7
b
4,560
4,320 4,320
mA
3, 12
CKE = HIGH; CS# = HIGH
56
56
56
mA
18, 19, 22, 31
SELF REFRESH CURRENT: CKE 0.2V
40
40
40
mA
4
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參數(shù)描述
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MT16LSDT6464AY-133D2 功能描述:MODULE SDRAM 512MB 168-DIMM RoHS:是 類別:存儲卡，模塊 >> 存儲器 - 模塊 系列:- 標(biāo)準(zhǔn)包裝:100 系列:- 存儲器類型:SDRAM 存儲容量:1GB 速度:133MHz 特點:- 封裝/外殼:168-DIMM
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