參數(shù)資料
型號： MSP430FW425IPM
廠商： TEXAS INSTRUMENTS INC
元件分類： 微控制器/微處理器
英文描述： 16-BIT, FLASH, 8 MHz, RISC MICROCONTROLLER, PQFP64
封裝： GREEN, PLASTIC, QFP-64
文件頁數(shù)： 32/61頁
文件大?。?/td> 828K
代理商： MSP430FW425IPM
MSP430FW42x
SLAS383D – OCTOBER 2003 – REVISED JANUARY 2011
www.ti.com
Scan IF, SIFCLK Oscillator
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
AVCC = DVCC (connected together),
AVCC
Analog supply voltage
2.2
3.6
V
AVSS = DVSS (connected together)
Scan IF oscillator operating
2.2 V
75
AICC
supply current into AVCC
A
3 V
90
terminal
SIFNOM = 0
1.8
3.2
Scan IF oscillator at minimum
TA = 25C,
fSIFCLKG = 0
MHz
setting
SIFCLKFQ = 0000
SIFNOM = 1
0.45
0.8
SIFNOM = 0
4
Scan IF oscillator at nominal
TA = 25C,
fSIFCLKG = 8
MHz
setting
SIFCLKFQ = 0000
SIFNOM = 1
1
SIFNOM = 0
4.48
6.8
Scan IF oscillator at maximum
TA = 25C,
fSIFCLKG = 15
MHz
setting
SIFCLKFQ = 0000
SIFNOM = 1
1.12
1.7
Settling time to full operation
ton(SIFCLKG)
2.2 V/3 V
150
500
ns
after VCC is switched on
Frequency change per ±1
S(SIFCLK)
S(SIFCLK) = f(SIFCLKFQ + 1) / f(SIFCLKFQ)
2.2 V/3 V
1.01
1.05
1.18 Hz/Hz
SIFCLKFQ(SIFCTL5) step
Dt
Temperature Coefficient
SIFCLKFQ(SIFCTL5) = 8
2.2 V/3 V
0.35
%/_C
Frequency vs supply voltage
DV
SIFCLKFQ(SIFCTL5) = 8
2.2 V/3 V
2
%/V
VCC variation
Flash Memory
over recommended operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
VCC
MIN
TYP
MAX
UNIT
VCC(PGM/ ERASE)
Program and erase supply voltage
2.7
3.6
V
fFTG
Flash timing generator frequency
257
476
kHz
IPGM
Supply current from DVCC during program
2.7 V/ 3.6 V
3
5
mA
IERASE
Supply current from DVCC during erase
2.7 V/ 3.6 V
3
7
mA
tCPT
Cumulative program time
(1)
2.7 V/ 3.6 V
10
ms
tCMErase
Cumulative mass erase time
(2)
2.7 V/ 3.6 V
20
ms
Program/Erase endurance
104
105
cycles
tRetention
Data retention duration
TJ = 25°C
100
years
tWord
Word or byte program time
35
tBlock, 0
Block program time for 1st byte or word
30
Block program time for each additional byte
tBlock, 1-63
21
or word
(3)
tFTG
tBlock, End
Block program end-sequence wait time
6
tMass Erase
Mass erase time
5297
tSeg Erase
Segment erase time
4819
(1)
The cumulative program time must not be exceeded when writing to a 64-byte flash block. This parameter applies to all programming
methods: individual word/byte write and block write modes.
(2)
The mass erase duration generated by the flash timing generator is at least 11.1 ms ( = 5297 × (1 / fFTG,max) = 5297 x (1 / 476 kHz)).
To achieve the required cumulative mass erase time, the Flash Controller's mass erase operation can be repeated until this time is met.
(A worst case minimum of 19 cycles are required).
(3)
These values are hardwired into the Flash Controller's state machine (tFTG = 1/fFTG).
38
Copyright 2003–2011, Texas Instruments Incorporated
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