參數(shù)資料
型號(hào)： MSP1N6630US
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類： 整流器
英文描述： 3 A, SILICON, RECTIFIER DIODE
封裝： GLASS, D-5B PACKAGE, 2 PIN
文件頁數(shù)： 1/4頁
文件大小： 380K
代理商： MSP1N6630US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT ULTRA FAST
RECOVERY GLASS RECTIFIERS
SCOTTSD A L E DIVISION
1N6626US thru 1N6631US
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DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/590 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in axial-leaded packages for thru-hole mounting (see separate
data sheet for 1N6626 thru 1N6631). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
requirements including standard, fast and ultrafast device types in both through-hole
and surface mount packages.
Package “E”
or D-5B
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Surface mount series equivalent to the JEDEC registered
1N6626 to 1N6631 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/590
Further options for screening in accordance with MIL-
PRF-19500 for JANS by using a “MSP” prefix, e.g.
MSP6626US, MSP6629US, etc.
Axial-leaded equivalents also available (see separate data
sheet for 1N6626 thru 1N6631)
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65
oC to +175oC
Storage Temperature: -65
oC to +175oC
Peak Forward Surge Current @ 25
oC: 75A (except
1N6631 which is 60A)
Note: Test pulse = 8.3ms, half-sine wave.
Average Rectified Forward Current (IO) at TEC = +110
oC:
1N6626US thru 1N6628US
4.0A
1N6629US thru 1N6630US
3.0A
1N6631US
2.5A
(Derate linearly at 1.5%/
oC for TEC > +110oC)
Average Rectified Forward Current (IO) at TA=25
oC:
1N6626US thru 1N6628US
2.0A
1N6629US thru 1N6631US
1.4A
(Derate linearly at 0.67%/
oC for TA>+25oC. This IO rating
is typical for PC boards where thermal resistance from
mounting point to ambient is sufficiently controlled where
TJ(max) is not exceeded.)
Thermal Resistance junction to endcap (RθJEC): 10
oC/W
Capacitance at VR= 10 V: 40 pF
Solder temperature: 260
oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: End caps are solid Silver
(Ag) with Tin/Lead finish
MARKING: Cathode band only
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-481-B
Weight: 539 mg
See package dimensions and recommended
pad layout on last page
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2004
11-01-2004 REV A
相關(guān)PDF資料
PDF描述
MSP6624 1 A, SILICON, SIGNAL DIODE
JANTXV1N6625 1 A, SILICON, SIGNAL DIODE
JANTX1N6624 1 A, SILICON, SIGNAL DIODE
JANTX1N6625 1 A, SILICON, SIGNAL DIODE
JAN1N6623 1 A, SILICON, SIGNAL DIODE
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