參數(shù)資料
型號： MSP6624
廠商： MICROSEMI CORP
元件分類： 二極管(射頻、小信號、開關(guān)、功率)
英文描述： 1 A, SILICON, SIGNAL DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù)： 1/4頁
文件大?。?/td> 339K
代理商： MSP6624
VOIDLESS-HERMETICALLY SEALED
ULTRA FAST RECOVERY GLASS
RECTIFIERS
SCOTTSD A L E DIVISION
1N6620 thru 1N6625
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DESCRIPTION
APPEARANCE
This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal “Category I” metallurgical bond. These devices
are also available in surface mount MELF package configurations by adding a “US”
suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also
offers numerous other rectifier products to meet higher and lower current ratings
with various recovery time speed requirements including standard, fast and ultrafast
device types in both through-hole and surface mount packages.
Package “A”
Axial
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Popular JEDEC registered 1N6620 to 1N6625 series
Voidless hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF-
19500/585
Further options for screening in accordance with
MIL-PRF-19500 for JANS by using a “MSP” prefix,
e.g. MSP6620, MSP6624, etc.
Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N6620US thru 1N6625US)
Ultrafast recovery rectifier series 200 to 1000 V
Military and other high-reliability applications
Switching power supplies or other applications
requiring extremely fast switching & low forward
loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power
capability
Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Junction Temperature: -65
oC to +175oC
Storage Temperature: -65
oC to +175oC
Peak Forward Surge Current @ 25
oC: 20 Amps
(except 1N6625 which is 15 Amps)
Note: Test pulse = 8.3 ms, half-sine wave.
Average Rectified Forward Current (IO) at TL= +55
oC
(L=.375 inch from body):
1N6620 thru 1N6622: 2.0 Amps
1N6623 thru 1N6625: 1.5 Amps
(Derate linearly at 0.833%/
oC for TL> +55oC)
Average Rectified Forward Current (IO) at TA=25
oC:
1N6620 thru 1N6622: 1.2 Amps
1N6623 thru 1N6625: 1.0 Amp
(Derate linearly at 0.67%/
oC for TA>+25oC. This IO
rating is typical for PC boards where thermal
resistance from mounting point to ambient is
sufficiently controlled where TJ(max) is not exceeded.)
Thermal Resistance L= 0.375 inch (RθJL): 38
oC/W
Capacitance at VR= 10 V: 10 pF
Solder temperature: 260
oC for 10 s (maximum)
CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
TERMINATIONS: Axial-leads are Copper with
Tin/Lead (Sn/Pb) finish
MARKING: Body painted and part number, etc.
POLARITY: Cathode indicated by band
Tape & Reel option: Standard per EIA-296
Weight: 340 mg
See package dimensions on last page
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2004
12-03-2004 REV A
相關(guān)PDF資料
PDF描述
JANTXV1N6625 1 A, SILICON, SIGNAL DIODE
JANTX1N6624 1 A, SILICON, SIGNAL DIODE
JANTX1N6625 1 A, SILICON, SIGNAL DIODE
JAN1N6623 1 A, SILICON, SIGNAL DIODE
JANTX1N6623 1 A, SILICON, SIGNAL DIODE
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