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參數(shù)資料
| 型號(hào)： | MSC82302 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 0.250 INCH, HERMETIC SEALED, S010, STRIPAC-2 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 96K |
| 代理商： | MSC82302 |
PRELIMINARY DATA
October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
VSWR CAPABILITY 20:1 @ RATED
CONDITIONS
.
HERMETIC STRIPAC PACKAGE
.
POUT
= 1.8 W MIN. WITH 10.0 dB GAIN
DESCRIPTION
The MSC82302 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing a rugged overlay die geometry. This device
is capable of withstanding 20:1 load VSWR at
any phase angle under rated conditions.
The MSC82302 was designed for Class C Am-
plifier/Oscillator applications in the 1.5 - 2.3 GHz
frequency range.
PIN CONNECTION
BRANDING
82302
ORDER CODE
MSC82302
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 50C)
6.0
W
IC
Device Current*
300
mA
VCC
Collector-Supply Voltage*
26
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
25
°C/W
*Applies only to rated RF amplifier operation
MSC82302
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/4
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| MSC82304 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS |
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