參數(shù)資料
型號(hào)： MSC83301
廠商： STMICROELECTRONICS
元件分類： 小信號(hào)晶體管
英文描述： S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝： HERMETIC SEALED, S010, STRIPAC-2
文件頁(yè)數(shù)： 1/5頁(yè)
文件大?。?/td> 145K
代理商： MSC83301
September 2, 1994
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.
REFRACTORY/GOLD METALLIZATION
.
EMITTER SITE BALLASTED
.
VSWR CAPABILITY
∞:1 @ RATED
CONDITIONS
.
HERMETIC STRIPAC PACKAGE
.
POUT
= 1.0 W MIN. WITH 7.0 dB GAIN
@ 3.0 GHz
DESCRIPTION
The MSC83301 is a common base hermetically
sealed silicon NPN microwave power transistor
utilizing an overlay, emitter site ballasted geome-
try with a refractory gold metallization system.
This device is capable of withstanding an infinite
load VSWR at any phase angle under rated con-
ditions. The MSC83301 is designed for Class C
amplifier/oscillator applications in the 1.0 - 3.0
GHz frequency range.
PIN CONNECTION
BRANDING
83301
ORDER CODE
MSC83301
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
(TC
≤ 50C)
6.0
W
IC
Device Current*
200
mA
VCC
Collector-Supply Voltage*
30
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
25
°C/W
*Applies only to rated RF amplifier operation
MSC83301
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/5
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