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參數(shù)資料
| 型號： | MSC82003 |
| 廠商： | STMICROELECTRONICS |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.250 INCH, HERMETIC SEALED, S010, STRIPAC-2 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 170K |
| 代理商： | MSC82003 |
October 1992
GENERAL PURPOSE AMPLIFIER APPLICATIONS
RF & MICROWAVE TRANSISTORS
.250 2LFL (S010)
hermetically sealed
.
EMITTER BALLASTED
.
VSWR CAPABILITY
∞:1 @ RATED
CONDITIONS
.
REFRACTORY/GOLD METALLIZATION
.
HERMETIC STRIPAC PACKAGE
.
POUT
= 3.0 W MIN. WITH 7.8 dB GAIN
@ 2.0 GHz
DESCRIPTION
The MSC82003 is a common base hermetically
sealed silicon NPN microwave transistor utilizing
a fishbone emitter ballasted geometry with a re-
fractory/gold metallization system. This device is
capable of withstanding an infinite load VSWR at
any phase angle under rated rated conditions. The
MSC82003 was designed for Class C amplifier
applications in the 1.0 - 2.0 GHz frequency range.
PIN CONNECTION
BRANDING
82003
ORDER CODE
MSC82003
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol
Parameter
Value
Unit
PDISS
Power Dissipation*
21.8
W
IC
Device Current*
600
mA
VCC
Collector-Supply Voltage*
35
V
TJ
Junction Temperature
200
°C
TSTG
Storage Temperature
65 to +200
°C
RTH(j-c)
Junction-Case Thermal Resistance*
8.0
°C/W
*Applies only to rated RF amplifier operation
MSC82003
1. Collector
3. Emitter
2. Base
4. Base
THERMAL DATA
1/5
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