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參數(shù)資料
| 型號： | MSB92ASWT1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP Silicon General Purpose High Voltage Transistor(PNP型通用高壓晶體管) |
| 中文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | CASE 419-02, SC-70, 3 PIN |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 43K |
| 代理商： | MSB92ASWT1 |
MSB92ASWT1
http://onsemi.com
3
PACKAGE DIMENSIONS
SC70 (SOT323)
CASE 41904
ISSUE M
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
A
A2
D
e1
b
e
E
A1
c
L
3
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028
mm
inches
SCALE 10:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
H
E
DIM
A
A1
A2
b
c
D
E
e
e1
MIN
0.80
0.00
NOM
0.90
0.05
0.7 REF
0.35
0.18
2.10
1.24
1.30
0.65 BSC
0.425 REF
MAX
1.00
0.10
MIN
0.032
0.000
MILLIMETERS
INCHES
NOM
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.035
0.002
0.028 REF
0.040
0.004
0.014
0.007
0.083
0.049
0.051
0.016
0.010
0.087
0.053
0.055
MAX
L
2.00
2.10
2.40
0.079
0.083
0.095
H
E
0.026 BSC
0.017 REF
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MSB92ASWT1/D
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| MSB92ASWT1G | 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSB92AWT1 | 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSB92AWT1G | 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MSB92T1 | 功能描述:TRANS PNP GP BIPO 300V SC-59 RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| MSB92T1G | 功能描述:兩極晶體管 - BJT SS HV XSTR PNP 300V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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