參數(shù)資料
型號(hào)： MSAGZ52F120A
廠商： MICROSEMI CORP-COLORADO
元件分類： 功率晶體管
英文描述： Circular Connector; No. of Contacts:37; Series:MS27468; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:15; Circular Contact Gender:Socket; Circular Shell Style:Jam Nut Receptacle; Insert Arrangement:15-35 RoHS Compliant: No
中文描述： 52 A, 1200 V, N-CHANNEL IGBT
文件頁(yè)數(shù)： 2/2頁(yè)
文件大?。?/td> 52K
代理商： MSAGZ52F120A
DESCRIPTION
Collector-to-Emitter Breakdown Voltage
(Gate Shorted to Emitter)
Gate Threshold Voltage
Gate-to-Emitter Leakage Current
SYMBOL
BV
CES
CONDITIONS
MIN
1200
TYP.
MAX
UNIT
V
V
GS
= 0 V, I
C
= 250
μ
A
V
GE(th)
V
CE
= V
GE
, I
C
= 350
μ
A
V
GE
=
±
20V
DC
, V
CE
= 0 T
J
= 25
°
C
T
J
= 125
°
C
V
CE
=0.8
BV
CES
T
J
= 25
°
C
V
GE
= 0 V T
J
= 125
°
C
V
GE
= 15V, I
C
= 25A T
J
= 25
°
C
I
C
= 25A T
J
= 125
°
C
I
C
= 60A T
J
= 25
°
C
I
C
= 30A T
J
= 125
°
C
V
CE
= 20 V; I
C
= 25 A
4.5
5.5
6.5
±
100
±
200
250
1000
3.2
3.9
V
nA
I
GES
Collector-to-Emitter Leakage Current (Zero Gate
Voltage Collector Current)
Collector-to-Emitter Saturation Voltage (1)
I
CES
μ
A
V
CE(sat)
2.7
3.3
3.4
4.3
20
V
Forward Transconductance (1)
g
fs
8.5
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
INDUCTIVE LOAD, Tj= 125
°
C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
INDUCTIVE LOAD, Tj= 125
°
C
Turn-on Delay Time
Rise Time
On Energy
Turn-off Delay Time
Fall Time
Off Energy
Total Gate Charge
Gate-to-Emitter Charge
Gate-to-Collector (Miller) Charge
Antiparallel diode forward voltage (MSAHZ52F120A
only)
Antiparallel diode reverse recovery time
(MSAHZ52F120A only)
Antiparallel diode reverse recovery charge
(MSAHZ52F120A only)
Antiparallel diode peak recovery current
(MSAHZ52F120A only)
C
ies
C
oes
C
res
V
GE
= 0 V, V
CE
= 25 V, f = 1 MHz
1650
250
110
2200
380
160
pF
t
d(on)
t
ri
E
on
t
d(off)
t
fi
E
off
V
GE
= 15 V, V
CE
= 600 V,
I
C
= 25 A, R
G
= 47
,
L= 100
μ
H note 2, 3
75
65
3.6
420
45
2.4
110
100
560
60
ns
ns
mJ
ns
ns
mJ
t
d(on)
t
ri
E
on
t
d(off)
fi
E
off
Q
g
Q
ge
Q
gc
V
F
V
GE
= 15 V, V
CE
= 600 V,
I
C
= 50 A, R
G
= 47
,
L= 100
μ
H note 2, 3
95
90
10
420
45
4.2
160
20
75
2.4
2
ns
ns
mJ
ns
ns
mJ
nC
V
GE
= 15 V, V
CE
= 600V, I
C
= 25A
I
E
= 10 A T
J
= 25
°
C
I
E
= 10 A T
J
= 100
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 800 A/us, T
J
= 125
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 800 A/us, T
J
= 125
°
C
I
E
= 10 A, dI
E
/dt= 100 A/us, T
J
= 25
°
C
I
E
= 10 A, dI
E
/dt= 800 A/us, T
J
= 125
°
C
3
V
V
ns
ns
nC
nC
A
A
t
rr
60
TBD
Q
rr
800
TBD
I
RM
22
TBD
Electrical Parameters @ 25
°
C (unless otherwise specified)
Notes
(1) Pulse test, t
≤
300
μ
s, duty cycle
δ
≤
2%
(2) switching times and losses may increase for larger V
CE
and/or R
G
values or higher junction temperatures.
(3) switching losses include “tail” losses
(4) Microsemi Corp. does not manufacture the igbt die; contact company for details.
MSAGZ52F120A
MSAHZ52F120A
相關(guān)PDF資料
PDF描述
MSAHX60F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
MSAGX60F60A N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
MSAHX75L60C N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
MSARS200S10L HIGH CURRENT CAPABILITY LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER
MSARS200S10LR HIGH CURRENT CAPABILITY LOW VOLTAGE DROP STANDARD RECOVERY RECTIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MSAHR36F120A 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP 36A 3PIN COOLPACK1 - Bulk
MSAHR55F60A 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP 55A 3PIN COOLPACK1 - Bulk
MSAHR57L120A 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP 57A 3PIN COOLPACK1 - Bulk
MSAHR70L60A 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP 70A 3PIN COOLPACK1 - Bulk
MSAHX60F60A 制造商:Microsemi Corporation 功能描述:TRANS IGBT CHIP N-CH 600V 60A 3PIN COOLPACK1 - Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*