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參數(shù)資料
| 型號： | MSAHX75L60C |
| 廠商： | MICROSEMI CORP-COLORADO |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR |
| 中文描述： | 75 A, 600 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 49K |
| 代理商： | MSAHX75L60C |
MSAHX75L60C
600 Volts
75 Amps
1.8 Volts vce(sat)
Features
Rugged polysilicon gate cell structure
high current handling capability, latch-proof
Hermetically sealed, surface mount power package
Low package inductance
Very low thermal resistance
Reverse polarity available upon request: MSAHX75L60D
low VCE(sat) IGBT, low conduction losses
DESCRIPTION
SYMBOL
MAX.
UNIT
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ T
J
≥
25
°
C
Collector-to-Gate Breakdown Voltage
@ T
J
≥
25
°
C, R
GS
= 1 M
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Continuous Collector Current
Tj= 25
°
C
Tj=
90
°
C
Peak Collector Current, pulse width limited by T
jmax
,
Safe Operating Area (RBSOA)
@ V
GE
= 15V, L= 30
μ
H (clamped inductive
load), R
G
= 2.7
, Tj= 125
°
C, V
CE
= 0.8 x V
CES
Power Dissipation
Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction to Case
BV
CES
600
Volts
BV
CGR
V
GES
V
GEM
I
C25
I
C90
600
+/-20
+/-30
75
60
Volts
Volts
Volts
Amps
I
CM
I
max
200
100
Amps
Amps
P
D
T
j
T
stg
θ
JC
300
Watts
°
C
°
C
°
C/W
-55 to +150
-55 to +150
0.25
Maximum Ratings @ 25
°
C (unless otherwise specified)
Mechanical Outline
Datasheet# MSC0296A
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
N-CHANNEL
INSULATED GATE
BIPOLAR TRANSISTOR
COLLECTOR
EMITTER
GATE
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