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參數(shù)資料
| 型號(hào)： | MS850 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 8 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | MS850 |
21201 Itasca St.
Chatsworth, CA 91311
Phone: (818) 701-4933
Fax:
(818) 701-4939
MS820
thru
MS8100
8 Amp Schottky
Barrier Rectifier
20 - 100 Volts
DO-201AD
Features
Low Switching Noise
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
---
.370
---
9.50
B
---
.250
---
6.40
C
.048
.052
1.20
1.30
D
1.000
---
25.40
---
Maximum Ratings
Operating Temperature: -65
°C to +175°C
Storage Temperature: -65
°C to +175°C
Maximum Thermal Resistance; 18
°C/W Junction To Ambient
Microsemi
Part Number
Maximum
Recurrent Peak
Reverse
Voltage
Maximum
RMS Voltage
Maximum DC
Blocking
Voltage
MS820
20V
14V
20V
MS830
30V
21V
30V
MS840
40V
28V
40V
MS845
45V
31.5V
45V
MS850
50V
35V
50V
MS860
60V
42V
60V
MS880
80V
56V
80V
MS8100
100V
70V
100V
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
8.0A
TA = 120
°C
Peak Forward Surge
Current
IFSM
400A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
MS820-MS845
MS850-MS860
MS880-MS8100
VF
.55V
.70V
.75V
IFM = 5.0A;
TA = 25
°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR
1.0mA
TA = 25
°C
Typical Junction
Capacitance
CJ
240pF
Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300
sec, Duty cycle 1%
A
B
C
D
Cathode
Mark
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