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參數(shù)資料
| 型號(hào)： | MSC1150M |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.400 X 0.400 INCH, FM-2 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 14K |
| 代理商： | MSC1150M |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. B
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 10 mA
65
V
BVCER
IC = 15 mA
RBE = 10
65
V
BVEBO
IE = 1.0 mA
3.5
V
ICES
VCE = 50 V
12.5
mA
hFE
VCE = 5.0 V
IC = 1.0 A
15
120
---
Cob
VCB = 28 V
f = 1.0 MHz
80
pF
PG
ηηηη
C
VCC = 50 V
POUT = 150 W
f = 1025 - 1150 MHz
7.8
40
8.3
42
dB
%
NPN SILICON RF POWER TRANSISTOR
MSC1150M
DESCRIPTION:
The
ASI MSC1150M is Designed for
Class C, DME/TACAN Applications
up to 1150 MHz.
FEATURES:
Internal Input/Output Matching Networks
P
G = 7.8 dB at 150 W/1150 MHz
Omnigold Metalization System
MAXIMUM RATINGS
IC
11 A
VCC
55 V
PDISS
400 W @ TC = 25 °C
TJ
-65 °C to +250 °C
TSTG
-65 °C to +200 °C
θθθθ
JC
0.3 °C/W
PACKAGE STYLE .400 2NL FLG
MIN IMU M
inches / m m
.100 / 2.54
.110 / 2.79
.376 / 9.55
.395 / 10.03
B
C
D
E
F
G
A
M AXIM U M
.396 / 10.06
.407 / 10.34
.130 / 3.30
inches / m m
.450 / 11.43
H
DIM
K
L
I
J
.640 / 16.26
.890 / 22.61
.004 / 0.10
.660 / 16.76
.910 / 23.11
.007 / 0.18
H
F
C
E
N
D
M
G
4x .062 x 45°
P
L
K
I
J
2X B
.025 x 45°
A
N
M
.118 / 3.00
.131 / 3.33
.020 / 0.51
.030 / 0.76
.193 / 4.90
.125 / 3.18
.395 / 10.03
.415 / 10.54
.072 / 1.83
.052 / 1.32
P
.230 / 5.84
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