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參數(shù)資料
| 型號： | MS62256H-35RC |
| 廠商： | Mosel Vitelic, Corp. |
| 英文描述： | 32K x 8 HIGH SPEED CMOS STATIC RAM |
| 中文描述： | 32K的× 8高速CMOS靜態(tài)RAM |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 108K |
| 代理商： | MS62256H-35RC |
MOSEL-VITELIC
MS62256H
Capacitance(1) T
A = 25°C, f = 1.0MHz
1. This parameter is guaranteed and not tested.
Data Retention Characteristics (over the commercial operating range)
Timing Waveform Low VCC Data Retention Waveform
Symbol
Parameter
Conditions
Max.
Unit
C IN
Input Capacitance
VIN = 0V
8
p F
CI/O
Input/Output
Capacitance
VI/O = 0V
10
p F
DC Electrical Characteristics (over the commercial operating range)
1.
Typical characteristics are at VCC = 5V, TA = 25°C.
2.
These are absolute values with respect to device ground and all overshoots due to system or tester noise are included.
3.
VIL (Min.) = –3.0V for pulse width ≤ 20ns
4.
FMAX = 1/tRC.
5.
L version only.
Parameter
MS62256H
Name
Parameter
Test Conditions
Min.
Typ.(1)
Max.
Units
VIL
Guaranteed Input Low Voltage(2,3)
–0.3
-
0.8
V
VIH
Guaranteed Input High Voltage(2)
2.2
-
6.0
V
IIL
Input Leakage Current
VCC= Max, V IN = 0V to VCC
–2
-
2
A
IOL
Output Leakage Current
VCC= Max, E = VIH or G = VIH, VIN = 0V t o VCC
–2
-
2
A
VOL
Output Low Voltage
VCC = Min, IOL = 8mA
-
0.4
V
VOH
Output High Voltage
VCC = Min, IOH = -4.0mA
2.4
-
V
ICC
Operating Power Supply Current
VCC= Max, E = VIL, IDQ = 0mA, F = Fm ax
(4)
-
200
mA
ICCSB
Standby Power Supply Current
VCC = Max, E = V IH, IDQ = 0mA
-
40
mA
ICCSB1
Power Down Power Supply
VCC = Max, E ≥V CC – 0.2V
-
2
mA
Current
VIN≥V CC – 0.2V or VIN≤0.2V
-
130(5)
A
Symbol
Parameter
Test Conditions
Min.
Typ.(1)
Max(2)
Units
VDR
VCC for Data Retention
E
≥V
CC – 0.2V, VIN ≥V CC – 0.2V or VIN ≤0.2V
2.0(
-
V
ICCDR
Data Retention Current
E
≥V
CC– 0.2V, VIN ≥V CC-– 0.2V or VIN ≤0.2V
-
2
504)
A
tCDR
Chip Deselect to Data Retention
Time
See Retention Waveform
0
-
ns
tR
Operation Recovery Time
tRC(3)
-
ns
1.
VCC = 2V, TA = +25°C
2.
VCC = 3V
3.
tRC = Read Cycle Time
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