參數(shù)資料
型號: MS27C801
廠商: 意法半導(dǎo)體
英文描述: 8 Mbit (1Mb x 8) UV EPROM and OTP EPROM
中文描述: 8兆(1兆× 8)紫外線存儲器和OTP存儲器
文件頁數(shù): 8/16頁
文件大?。?/td> 158K
代理商: MS27C801
M27C801
8/16
Figure 6. MARGIN MODE AC Waveforms
Note: A8 High level = 5V; A9 High level = 12V.
AI00736B
tA9HVPH
tVPXA9X
A8
E
GVPP
A10 Set
VCC
tVPHEL
tA10LEH
tEXVPX
tA10HEH
A9
A10 Reset
tEXA10X
Table 11. Programming Mode DC Characteristics
(1)
(T
A
= 25 °C; V
CC
= 6.25V ± 0.25V; V
PP
= 12.75V ± 0.25V)
Symbol
Alt
Note: 1. V
CC
must be applied simultaneously with or before V
PP
and removed simultaneously or after V
PP
.
2. Sampled only, not 100% tested.
Parameter
Test Condition
Min
Max
Unit
t
AVEL
t
AS
Address Valid to Chip Enable Low
2
μs
t
QVEL
t
DS
Input Valid to Chip Enable Low
2
μs
t
VCHEL
t
VCS
V
CC
High to Chip Enable Low
2
μs
t
VPHEL
t
OES
V
PP
High to Chip Enable Low
2
μs
t
VPLVPH
t
PRT
V
PP
Rise Time
50
ns
t
ELEH
t
PW
Chip Enable Program Pulse Width (Initial)
45
55
μs
t
EHQX
t
DH
Chip Enable High to Input Transition
2
μs
t
EHVPX
t
OEH
Chip Enable High to V
PP
Transition
2
μs
t
VPLEL
t
VR
V
PP
Low to Chip Enable Low
2
μs
t
ELQV
t
DV
Chip Enable Low to Output Valid
1
μs
t
EHQZ (2)
t
DFP
Chip Enable High to Output Hi-Z
0
130
ns
t
EHAX
t
AH
Chip Enable High to Address Transition
0
ns
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