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參數資料
| 型號： | MS2208 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.400 X 0.600 INCH, HERMETIC SEALED, M198, 2 PIN |
| 文件頁數： | 1/5頁 |
| 文件大?。?/td> | 175K |
| 代理商： | MS2208 |
MS2208
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION
::
THE MS2208 IS A SILICON NPN BIPOLAR DEVICE SPECIFICALLY
DESIGNED FOR PULSED POWER APPLICATIONS AT 1090 MHz.
GOLD METALLIZATION AND EMITTER BALLASTING ASSURE
HIGH RELIABILITY.
AABSOLUTE MAXIMUM RATINGS
BSOLUTE MAXIMUM RATINGS (Tcase = 25°°C)
Symbol
Parameter
Value
Unit
Vcc
Collector Supply Voltage
*
55
V
IC
Device Current
*
27
A
PDISS
Power Dissipation
*
1,360
W
TJ
Junction Temperature
* (Pulsed RF Operation)
+250
°°C
TSTG
Storage Temperature
-65 to +200
°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance*
0.11
°°C/W
*Applies to rated RF amplifier operation
Features
1090 MHz
COMMON BASE
GOLD METALLIZATION
CLASS C
P
OUT = 500 W MIN. WITH 8.5 dB GAIN
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
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