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參數(shù)資料
| 型號(hào)： | MS2209 |
| 元件分類： | 功率晶體管 |
| 英文描述： | L BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | 0.400 X 0.400 INCH, HERMETIC SEALED, 2NFL, S042, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 440K |
| 代理商： | MS2209 |
MS2209
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.
DESCRIPTION:
The MS2209 is a broadband, high peak pulse power silicon NPN
bipolar device specifically designed for avionics applications requiring
broad bandwidth with moderate duty cycles and pulse width
constraints such as ground/ship based DME/TACAN.
This device is also designed for specialized applications including
JTIDS applications when duty cycle is moderately higher. Gold
metallization and emitter ballasting assure high reliability under Class
C amplifier operation.
ABSOLUTE MAXIMUM RATINGS
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°°°°C)
Symbol
Parameter
Value
Unit
VCC
Collector Supply Voltage
50
V
IC
Device Current
7.0
A
PDISS
Power Dissipation
220
W
TJ
Junction Temperature (RF Pulsed Operation)
+200
°°°°C
TSTG
Storage Temperature
-65 to +200
°°°°C
Thermal Data
RTH(J-C)
Junction-case Thermal Resistance
0.80
°°°°C/W
Features
225 MHz BANDWIDTH
COMMON BASE
GOLD METALLIZATION
CLASS C OPERATION
POUT = 90 W MIN. WITH 13 dB GAIN
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
Rev A 09-2005
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MS2209_08 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
| MS221 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Film Resistors |
| MS-221 | 制造商:DWYER INSTRUMENTS 功能描述:MS-221 BI LR 0-10V WALL MT |
| MS2210 | 制造商:Microsemi Corporation 功能描述:MS2210 - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR BIPOLAR/HBT |
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