參數(shù)資料
型號: MRFIC1830
廠商: Motorola, Inc.
英文描述: GaAs Low Noise Amplifiers(GaAs低噪聲放大器)
中文描述: 砷化鎵低噪聲放大器(砷化鎵低噪聲放大器)
文件頁數(shù): 3/4頁
文件大?。?/td> 162K
代理商: MRFIC1830
3
BENEFITS TO YOU
Lowers system cost and manufacturing costs due to integrated, on-chip gain
control circuitry.
Inherent excellent RF signal isolation with 38 to 41 dB of Reverse Isolation at
the operating frequency.
Improves dynamic range of the receiver with integrated step attenuator for
gain control.
Can be used in three-cell battery-powered applications with a power supply
voltage as low as 2.7 V.
Maximized design flexibility and efficiency with off-chip input matching to
optimize gain or noise figure.
Smaller battery for portable applications with 2.7 V operation and low drain
current of only 20 μA in standby mode.
Improved performance with excellent gain, gain attenuation, and noise
figure specifications.
Higher circuit and system density with miniature Micro-8 (MRFIC0930DM
and MRFIC1830) and SO-8 (MRFIC0930 only) surface mount packages.
Improved reliability due to lower power dissipation.
A SOLUTION FOR THESE QUESTIONS
Do you want to reduce the parts count and lower your manufacturing costs
by using an LNA with on-chip gain control circuitry
Do you need more RF signal isolation for your system
Do you want to improve the dynamic range of your receiver with an LNA
that has an integrated step attenuator for gain control.
Does your design require that the battery size be reduced with a supply
voltage as low as 2.7 V and low power consumption
Would you like to improve your design flexibility by customizing the input
matching to optimize gain or noise figure for the LNA
Do you need to improve the performance of your wireless or RF product by
designing in an LNA that has excellent gain, gain attenuation, and noise
figure specifications
Do you want to reduce the pc board area for your portable RF product
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