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參數(shù)資料
| 型號： | MRFE6S9200HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 393K |
| 代理商： | MRFE6S9200HR3 |
MRFE6S9200HR3 MRFE6S9200HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dBc)
16
0
4
9
12
960
800
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 3. Single-Carrier W-CDMA Broadband Performance
@ Pout = 58 Watts Avg.
940
920
900
880
860
840
820
15
23
22
21
20
19
18
17
16
1.5
38
34
30
26
0.3
0.6
0.9
1.2
η
D
,DRAIN
EFFICIENCY
(%)
ηD
G
ps
,POWER
GAIN
(dB)
IRL,
INPUT
RETURN
LOSS
(dB)
P
ARC
(dBc)
15
3
6
9
12
960
800
IRL
Gps
PARC
f, FREQUENCY (MHz)
Figure 4. Single-Carrier W-CDMA Broadband Performance
@ Pout = 99 Watts Avg.
940
920
900
880
860
840
820
14
22
21
20
19
18
17
16
15
3
51
45
39
33
2.2
2.4
2.6
2.8
η
D
,DRAIN
EFFICIENCY
(%)
ηD
Figure 5. Two-Tone Power Gain versus
Output Power
100
17
23
1
IDQ = 2100 mA
1750 mA
Pout, OUTPUT POWER (WATTS) PEP
VDD = 28 Vdc
f1 = 875 MHz, f2 = 885 MHz
TwoTone Measurements
700 mA
1400 mA
1050 mA
22
21
20
10
600
G
ps
,POWER
GAIN
(dB)
Figure 6. Third Order Intermodulation Distortion
versus Output Power
0
1
IDQ = 700 mA
Pout, OUTPUT POWER (WATTS) PEP
1400 mA
1750 mA
1050 mA
2100 mA
100
10
20
30
40
600
60
50
VDD = 28 Vdc
f1 = 875 MHz, f2 = 885 MHz
TwoTone Measurements
10
INTERMODULA
TION
DIST
ORTION
(dBc)
IMD,
THIRD
ORDER
VDD = 28 Vdc, Pout = 99 W (Avg.)
IDQ = 1400 mA, SingleCarrier WCDMA
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
19
18
VDD = 28 Vdc, Pout = 58 W (Avg.)
IDQ = 1400 mA, SingleCarrier WCDMA
3.84 MHz Channel Bandwidth
PAR = 7.5 dB @ 0.01% Probability (CCDF)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRFE6S9200HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9200HSR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9200HSR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI880HS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9201HR3 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRFE6S9201HR5 | 功能描述:射頻MOSFET電源晶體管 HV6E 900MHZ 200W NI780H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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