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參數(shù)資料
| 型號： | MRF9745T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | HIGH FREQUENCY POWER TRANSISTOR LDMOS FET |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | PLASTIC, CASE 449-02, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 60K |
| 代理商： | MRF9745T1 |
1
MRF9745T1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Small Signal Line
N–Channel Enhancement–Mode MOSFET
Designed for use in low voltage, moderate power amplifiers such as portable
analog and digital cellular radios and PC RF modems.
Performance Specifications at 5.8 V, 900 MHz:
Output Power = 30 dBm Min
Power Gain = 10 dB Typ
Efficiency = 50% Min
Guaranteed Ruggedness at Load VSWR = 20:1
New Plastic Surface Mount Package
Available in Tape and Reel Packaging.
T1 Suffix = 1,000 Units per 8 mm, 7 inch Reel
Device Marking = 9745
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGO
VGS
ID
PD
35
Vdc
Drain–Gate Voltage (RGS = 1 M
)
Gate–Source Voltage
25
Vdc
±
10
Vdc
Drain Current – Continuous
2
Adc
Total Device Dissipation @ TC = 50
°
C
Derate above 50
°
C
10
100
W
mW/
°
C
Storage Temperature Range
Tstg
TJ
– 65 to +150
°
C
Operating Temperature Range
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
10
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Leakage Current
(VDS = 35 V, VGS = 0)
IDSS
–
–
10
μ
Adc
Gate–Source Leakage Current
(VGS = 5 V, VDS = 0)
IGSS
–
–
1
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9745T1/D
SEMICONDUCTOR TECHNICAL DATA
30 dBm, 900 MHz
HIGH FREQUENCY
POWER TRANSISTOR
LDMOS FET
CASE 449–02, STYLE 1
(PLD–1)
REV 1
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