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參數(shù)資料
| 型號(hào)： | MRF9811T1 |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | HIGH FREQUENCY GaAs FET TRANSISTOR |
| 中文描述： | L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 50K |
| 代理商： | MRF9811T1 |
1
MRF9811T1
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
The RF Small Signal Line
N–Channel Depletion–Mode MESFET
Designed for use in driver stages of moderate power RF amplifiers to 2 GHz.
Typical applications are cellular radios and personal communication
transmitters such as AMPS, ETACS, NMT, GSM, PCN, JDC and DECT.
Performance Specifications at 900 MHz, 5.8 V:
Output Power = 21 dBm
Power Gain = 14 dB Min
Drain Efficiency = 55% Min
Plastic Surface Mount Package
Order MRF9811T1 for Tape and Reel Packaging.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VGS
ID
PD
10
Vdc
Gate–Source Voltage
±
5
Vdc
Drain Current — Continuous
0.7
Adc
Total Device Dissipation @ TC = 50
°
C
Derate above 50
°
C
0.77
7.7
W
mW/
°
C
Storage Temperature Range
Tstg
TJ
–55 to +150
°
C
Operating Junction Temperature
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θ
JC
130
°
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Drain Breakdown Voltage
(IGD = 0.25 mA, Source Open)
V(BR)GDO
15
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 1.5 Vdc, VGS = 0)
IDSS
0.35
–
–
Adc
Gate–Source Leakage Current
(VGS = –5.0 Vdc, Drain Open)
IGSO
–
0.5
10
μ
Adc
NOTE –
CAUTION
– MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MRF9811T1/D
SEMICONDUCTOR TECHNICAL DATA
21 dBm, 5.8 V
HIGH FREQUENCY
GaAs FET TRANSISTOR
CASE 318A–05, STYLE 7
(SOT–143)
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