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參數(shù)資料
| 型號(hào)： | MRF962 |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | CAP 3.9PF 50V +/-0.25PF C0G SMD-0402 BULK SN100 HIGH-FREQ |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大小： | 31K |
| 代理商： | MRF962 |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
CEO
I
C
= 1.0 mA
BV
CBO
I
C
= 100
μ
A
BV
EBO
I
E
= 100
μ
A
I
CBO
V
CB
= 10 V
h
FE
V
CE
= 10 V I
C
= 50 mA
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
15
UNITS
V
V
20
3.0
V
100
nA
---
30
200
C
CB
V
CB
= 10 V
f = 1.0 MHz
1.2
1.5
pF
f
t
NF
V
CE
= 10 V
V
CE
= 10 V I
C
= 10 mA f = 0.5 GHz
I
C
= 50 mA f = 0.5 GHz
4.5
GHz
dB
2.0
NPN SILICON RF TRANSISTOR
MRF962
DESCRIPTION:
The
ASI MRF962
is designed for
Low-to-medium power amplifier
applications, requiring high gain, low
noise figure, and low intermodulation
distortion.
FEATURES:
NF
= 2.0 dB
Omnigold
Metalization System
Hermetic stripline, ceramic package
MAXIMUM RATINGS
I
C
100 mA
V
CB
20 V
P
DISS
.75 W @ T
C
= 100 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
133 °C/W
PACKAGE STYLE
MILLIMETERS
MIN
4.44
1.90
0.84
0.20
0.76
7.24
10.54
--
INCHES
MIN
0.175
0.075
0.033
0.008
0.030
0.285
0.415
--
DIM
A
C
D
F
G
K
L
N
MAX
5.21
2.54
0.99
0.30
1.14
8.13
11.43
1.65
MAX
0.205
0.100
0.039
0.012
0.045
0.320
0.450
0.065
1 = COLLECTOR
2 = EMITTER
3 = BASE
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