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參數(shù)資料
| 型號： | MS175H |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-72 |
| 封裝： | TO-72, 4 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 25K |
| 代理商： | MS175H |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CEO
I
C
= 5.0 mA
BV
CBO
I
C
= 10
μ
A
V
CB
= 20 V
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
15
UNITS
V
V
30
I
CBO
T
A
= 150
O
C
0.01
1.0
μ
A
BV
EBO
h
FE
V
CE(SAT)
V
BE(SAT)
f
t
I
E
= 1.0
μ
A
V
CE
= 1.0 V I
C
= 5.0 mA
I
C
= 20 mA
I
C
= 20 mA
V
CE
= 10 V I
C
= 5.0 mA
V
CB
= 0 V
V
CB
= 10 V
V
EB
= 0.5 V
2.0
V
40
150
---
V
V
I
B
= 2.0 mA
I
B
= 2.0 mA
0.8
1.0
f = 100 MHz
1500
MHz
C
ob
f = 1.0 MHz
f = 1.0 MHz
f = 1.0 MHz
3.0
1.0
3.0
pF
C
ib
NF
G
pe
P
o
η
pF
dB
V
CE
= 6.0 V I
C
= 1.5 mA
f = 200 MHz
15
3.5
4.5
V
CB
= 10 V I
E
= 12 mA
f = 500 MHz
30
25
mW
%
NPN SILICON HIGH FREQUENCY TRANSISTOR
MS175H
DESCRIPTION:
The
MS175H
is Designed for High
Frequency Low Noise Amplifier and
Oscillator Applications.
MAXIMUM RATINGS
I
C
100 mA
(PEAK)
V
CE
15 V
P
DISS
300 mW @ T
C
= 25
O
C
200 mW @ T
A
= 25
O
C
-65
O
C to +200
O
C
-65
O
C to +200
O
C
T
J
T
STG
PACKAGE STYLE TO-72
1 = EMITTER 2 = BASE
3 = COLLECTOR 4 = CASE
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