參數(shù)資料
型號: MRF957
廠商: MOTOROLA INC
元件分類: 小信號晶體管
英文描述: Low Noise High-Frequency Transistor(低噪聲高頻率晶體管)
中文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: CASE 149-02, 3 PIN
文件頁數(shù): 3/13頁
文件大?。?/td> 211K
代理商: MRF957
3
MMBR951 MRF957
MOTOROLA RF DEVICE DATA
PERFORMANCE CHARACTERISTICS
Conditions
Symbol
MMBR951LT1
MRF957T1
Unit
Min
Typ
Max
Min
Typ
Max
Insertion Gain
(VCE = 6.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Maximum Unilateral Gain (1)
(VCE = 8.0 V, IC = 30 mA, f = 1.0 GHz)
(VCE = 8.0 V, IC = 30 mA, f = 2.0 GHz)
(VCE = 5.0 V, IC = 30 mA, f = 1.5 GHz)
Noise Figure — Minimum (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Associated Gain at Minimum NF (Figure 9)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 2.0 GHz)
(VCE = 6.0 V, IC = 5.0 mA, f = 1.5 GHz)
Noise Figure — 50 ohm Source
(VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz)
NOTE:
1. Maximum Unilateral Gain is GUmax =
|S21|2
12.5
7.0
13.3
10.1
dB
GU max
14
8.0
14
10.8
dB
NFMIN
1.3
2.1
1.5
2.0
dB
GNF
13
7.5
11.8
9.0
dB
NF50
1.9
2.8
1.9
2.8
dB
|S21|2
(1–|S11|2)(1–|S22|2)
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