參數(shù)資料
型號(hào): MRFIC1805
廠(chǎng)商: MOTOROLA INC
元件分類(lèi): 衰減器
英文描述: SOCKET ADAPTER FOR PLCC32
中文描述: 1500 MHz - 2200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
文件頁(yè)數(shù): 1/10頁(yè)
文件大小: 220K
代理商: MRFIC1805
1
MRFIC1805
MOTOROLA RF DEVICE DATA
The MRFIC Line
This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead
plastic package is designed for output or driver applications in 1.9 GHz PCS
handsets and basestations. The design is optimized for 3.0 Volt operation in
systems such as Japan’s PHS, Europe’s DECT and the emerging North
American PCS services. With modifications to the simple off–chip matching, the
device can be used in other applications from 1.5 to 2.5 GHz.
High Output Capability = 27 dBm Typical Psat
21.5 dBm Typical with PHS Format
High Gain = 21 dB Typical Small Signal, 20 dB at Pout = 22 dBm
Low Current Drain = 170 mA Typical with PHS Format
250 mA Typical with DECT Format
Low–Cost, Low Profile Plastic TSSOP Package
Order MRFIC1805R2 for Tape and Reel.
R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel.
Device Marking = M1805
ABSOLUTE MAXIMUM RATINGS
(TA = 25 C unless otherwise noted)
Ratings
Symbol
Value
Unit
Supply Voltage
VDD, VD1,
VD2
6
Vdc
Supply Voltage
VSS
RFin
IDD
R
θ
JA
TJ
TA
Tstg
–4
Vdc
RF Input Power
+10
dBm
Drain Current
500
mA
Thermal Resistance, Junction to Air
240
/W
Operating Junction Temperature
+175
C
Ambient Operating Temperature
–30 to +85
C
Storage Temperature
–65 to +125
C
Pin Connections and Functional Block Diagram
8
7
6
5
GND
1
2
3
4
9
10
11
12
13
14
PCNTRL
VSS
GND
GND
N/C
GND
N/C
RF IN
RF OUT/
VD2
VD1
GATE
BIAS
15
16
GND
GND
GND
GND
RF OUT/
VD2
Order this document
by MRFIC1805/D
SEMICONDUCTOR TECHNICAL DATA
1.9 GHz
POWER AMPLIFIER
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 948C–03
(TSSOP–16)
REV 1
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