參數(shù)資料
型號： MRF9210
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： THREE PHASE MOSFET CONTROLLER
中文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-780, CASE 465-06, 2 PIN
文件頁數(shù)： 2/8頁
文件大小： 481K
代理商： MRF9210
MRF9210R3
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0)
I
DSS
—
—
1
μ
Adc
Gate-Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 )
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 330
μ
Adc)
V
GS(th)
1.5
2.8
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 800 mAdc)
V
GS(Q)
2.5
3.3
4.5
Vdc
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
V
DS(on)
—
0.2
0.4
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6.7 Adc)
g
fs
—
8.8
—
S
DYNAMIC CHARACTERISTICS
(1)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
3.6
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2) Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier,
Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF
N-CDMA Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 2 x 950 mA,
f = 880 MHz)
G
ps
15.8
16.5
—
dB
N-CDMA Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 2 x 950 mA,
f = 880 MHz)
η
23
25.5
—
%
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 2 x 950 mA,
f = 880 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
ACPR
—
-46.2
-45
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 2 x 950 mA,
f = 880 MHz)
IRL
9
17.5
—
dB
N-CDMA Common-Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 2 x 950 mA,
f = 865 MHz and 895 MHz)
G
ps
—
16.5
—
dB
N-CDMA Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 2 x 950 mA,
f = 865 MHz and 895 MHz)
η
—
25.5
—
%
Adjacent Channel Power Ratio
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 2 x 950 mA,
f = 865 MHz and 895 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth,
750 kHz Channel Spacing)
ACPR
—
-47.5
—
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 2 x 950 mA,
f = 865 MHz and 895 MHz)
IRL
—
15
—
dB
Output Mismatch Stress
(V
DD
= 26 Vdc, P
out
= 40 W Avg. N-CDMA, I
DQ
= 2 x 950 mA,
f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
(1) Each side of device measured separately.
(2) Device measured in push-pull configuration.
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
相關PDF資料
PDF描述
MRF9210R3 RF Power Field Effect Transistor
MRFG35010MT1 A3935 S0P
MRFIC1870 3.2 V DCS/PCS GaAs Integrated Power Amplifier
MRFIC1870D 3.2 V DCS/PCS GaAs Integrated Power Amplifier
MRFIC1870PP 3.2 V DCS/PCS GaAs Integrated Power Amplifier
相關代理商/技術參數(shù)
參數(shù)描述
MRF9210R3 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9210R5 功能描述:射頻MOSFET電源晶體管 200W RF LDMOS NI860ML RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF927T1 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW NOISE HIGH FREQUENCY TRANSISTOR
MRF927T3 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:LOW NOISE HIGH FREQUENCY TRANSISTOR
MRF931 制造商:Motorola Inc 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*