參數(shù)資料
型號： MRF9180
廠商： MOTOROLA INC
元件分類： 功率晶體管
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： NI-1230, CASE 375D-04, 5 PIN
文件頁數(shù)： 2/12頁
文件大小： 342K
代理商： MRF9180
MRF9180 MRF9180S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS
(T
C
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
10
μ
Adc
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
I
DSS
—
—
1
μ
Adc
Gate–Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
I
GSS
—
—
1
μ
Adc
ON CHARACTERISTICS
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 300
μ
Adc)
V
GS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 700 mAdc)
V
GS(Q)
—
3.7
—
Vdc
Drain–Source On–Voltage
(V
GS
= 10 Vdc, I
D
= 2 Adc)
V
DS(on)
—
0.19
0.5
Vdc
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 6 Adc)
g
fs
—
6
—
S
DYNAMIC CHARACTERISTICS
(1)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
77
—
pF
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
3.8
—
pF
FUNCTIONAL TESTS
(In Motorola Test Fixture, 50 ohm system) (2)
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 880.0 MHz, f2 = 880.1 MHz)
700 mA,
G
ps
16
17.5
—
dB
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 880.0 MHz, f2 = 880.1 MHz)
700 mA,
η
35
39
—
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 880.0 MHz, f2 = 880.1 MHz)
700 mA,
IMD
—
–31
–28
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 880.0 MHz, f2 = 880.1 MHz)
700 mA,
IRL
—
–15
–9
dB
Two–Tone Common–Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 865.0 MHz, f2 = 865.1 MHz)
700 mA,
G
ps
—
17.5
—
dB
Two–Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 865.0 MHz, f2 = 865.1 MHz)
700 mA,
η
—
38.5
—
%
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 865.0 MHz, f2 = 865.1 MHz)
700 mA,
IMD
—
–31
—
dBc
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 170 W PEP, I
DQ
= 2
f1 = 865.0 MHz, f2 = 865.1 MHz)
700 mA,
IRL
—
–13
—
dB
Power Output, 1 dB Compression Point
(V
DD
= 26 Vdc, CW, I
DQ
= 2
f1 = 880.0 MHz)
700 mA,
P
1dB
—
170
—
W
(1) Each side of device measured separately.
(2) Device measured in push–pull configuration.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MRF9180R5 功能描述:射頻MOSFET電源晶體管 170W 26V LDMOS NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9180R6 功能描述:射頻MOSFET電源晶體管 170W 26V LDMOS NI1230 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
MRF9180S 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
MRF9200LR3 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:N−Channel Enhancement−Mode Lateral MOSFETs
MRF9200LR3_06 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
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