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參數(shù)資料
| 型號： | MRF8P20161HSR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 479K |
| 代理商： | MRF8P20161HSR3 |
2
RF Device Data
Freescale Semiconductor
MRF8P20161HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2 (Minimum)
Machine Model (per EIA/JESD22--A115)
A (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics (1)
Zero Gate Voltage Drain Leakage Current
(VDS =65 Vdc, VGS =0 Vdc)
IDSS
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS =28 Vdc, VGS =0 Vdc)
IDSS
—
1
μAdc
Gate--Source Leakage Current
(VGS =5 Vdc, VDS =0 Vdc)
IGSS
—
1
μAdc
On Characteristics (1)
Gate Threshold Voltage
(VDS =10 Vdc, ID =116 μAdc)
VGS(th)
1.2
1.8
2.7
Vdc
Gate Quiescent Voltage
(VDD =28 Vdc, IDA = 550 mAdc, Measured in Functional Test)
VGS(Q)
1.9
2.7
3.4
Vdc
Drain--Source On--Voltage
(VGS =10 Vdc, ID =1.5 Adc)
VDS(on)
0.05
0.27
0.4
Vdc
Functional Tests (2,3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 550 mA, VGSB =1.6 Vdc, Pout =37 W Avg.,
f = 1920 MHz, Single--Carrier W--CDMA
, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Power Gain
Gps
15.0
16.4
18.0
dB
Drain Efficiency
ηD
42.2
45.8
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.5
7.0
—
dB
Adjacent Channel Power Ratio
ACPR
—
--30.4
--27.3
dBc
Typical Broadband Performance (3) (In Freescale Doherty Test Fixture, 50 ohm system) VDD =28 Vdc, IDQA = 550 mA, VGSB =1.6 Vdc,
Pout = 37 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @ ±5MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
1880 MHz
16.5
46.2
6.9
--27.9
1900 MHz
16.5
46.0
6.9
--29.1
1920 MHz
16.4
45.8
7.0
--30.4
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
(continued)
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| MRF8P20161HSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 161W NI780HS-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20165WHR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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| MRF8P20165WHSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20165WHSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 165W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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