參數(shù)資料
型號: MRF8P20161HSR3
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 功率晶體管
英文描述: 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: ROHS COMPLIANT, NI-780S-4, CASE 465H-02, 4 PIN
文件頁數(shù): 13/13頁
文件大?。?/td> 479K
代理商: MRF8P20161HSR3
MRF8P20161HSR3
9
RF Device Data
Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
34
Pin, INPUT POWER (dBm)
VDD =28 Vdc, IDQA = 550 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
52
50
48
35
53
51
45
P out
,O
UT
PU
T
POWER
(d
Bm)
NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V
49
54
56
33
31
39
30
29
55
47
46
28
Ideal
Actual
32
36
37
38
1880 MHz
1990 MHz
1930 MHz
2025 MHz
1880 MHz
1990 MHz
2025 MHz
1930 MHz
f
(MHz)
P1dB
P3dB
Watts
dBm
Watts
dBm
1880
102
50.1
126
51.0
1930
108
50.3
130
51.1
1990
105
50.2
129
51.1
2025
105
50.2
124
50.9
Test Impedances per Compression Level
f
(MHz)
Zsource
Zload
1880
P1dB
8.74 -- j9.81
2.08 -- j5.64
1930
P1dB
13.6 -- j9.01
2.29 -- j5.66
1990
P1dB
17.6 + j0.07
1.52 -- j5.96
2025
P1dB
14.6 + j4.42
1.75 -- j5.54
Figure 13. Pulsed CW Output Power
versus Input Power @ 28 V
NOTE: Measurement made on the Class AB, carrier side of the device.
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