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參數(shù)資料
| 型號(hào)： | MRF8P20140WHR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-780-4, CASE 465M-01, 4 PIN |
| 文件頁數(shù)： | 10/15頁 |
| 文件大?。?/td> | 607K |
| 代理商： | MRF8P20140WHR3 |
4
RF Device Data
Freescale Semiconductor
MRF8P20140WHR3 MRF8P20140WHSR3
Figure 2. MRF8P20140WHR3(WHSR3) Test Circuit Component Layout
MRF8P20140W
Rev. 1.2
CUT
OUT
A
REA
R2
C
P
VGGA
R3
C4
C7
C6
R6
C26
C2*
C3*
C1
C5
R7
Z1
C9
R1
C11
C10
C8
R5
R4
C24
C25
VGGB
VDDB
C22
C20
C21
C13*
C17
C12*
C23
C14
C16
C15
C18
C19
VDDA
Note 1: * denotes that C2, C3, C12 and C13 are mounted vertically.
Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply.
Table 5. MRF8P20140WHR3(WHSR3) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
0.6 pF Chip Capacitor
ATC600F0R6BT250XT
ATC
C2, C3
8.2 pF Chip Capacitors
ATC600F8R2BT250XT
ATC
C4, C8, C18, C24
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C5
1.2 pF Chip Capacitor
ATC600F1R2BT250XT
ATC
C6, C10, C12, C13, C14,
C20
12 pF Chip Capacitors
ATC600F120JT250XT
ATC
C7, C11
10 μF, 32 V Chip Capacitors
GRM32ER61H106KA12L
Murata
C9, C17
0.1 pF Chip Capacitors
ATC600F0R1BT250XT
ATC
C15, C21
6.8 μF, 50 V Chip Capacitors
C4532X7R1H685KT
TDK
C16, C22
2.2 μF, 100 V Chip Capacitors
C3225X7R2A225KT
TDK
C19, C25
220 μF, 100 V Chip Capacitors
EEV--FK2A221M
Panasonic--ECG
C23
0.2 pF Chip Capacitor
ATC600F0R2BT250XT
ATC
C26
1.5 pF Chip Capacitor
ATC600F1R5BT250XT
ATC
R1
50 , Chip Resistor
ATCCW12010T0050GBK
ATC
R2, R3, R4, R5
1.5 k, 1/4 W Chip Resistors
CRCW12061K50FKEA
Vishay
R6, R7
2.2 , 1/4 W Chip Resistors
CRCW12062R2FNEA
Vishay
Z1
1700--2000 MHz Band 90°, 3 dB Hybrid Coupler
1P503S
Anaren
PCB
0.020″, εr =3.5
R04350B
Rogers
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參數(shù)描述 |
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| MRF8P20140WHR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 24W NI780-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20140WHSR3 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 24W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20140WHSR5 | 功能描述:射頻MOSFET電源晶體管 HV8 2GHZ 24W NI780S-4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| MRF8P20160HR3 | 功能描述:DISCRETE RF FET RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
| MRF8P20160HR5 | 功能描述:DISCRETE RF FET RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> RF FET 系列:- 產(chǎn)品目錄繪圖:MOSFET SOT-23-3 Pkg 標(biāo)準(zhǔn)包裝:3,000 系列:- 晶體管類型:N 通道 JFET 頻率:- 增益:- 電壓 - 測試:- 額定電流:30mA 噪音數(shù)據(jù):- 電流 - 測試:- 功率 - 輸出:- 電壓 - 額定:25V 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:帶卷 (TR) 產(chǎn)品目錄頁面:1558 (CN2011-ZH PDF) 其它名稱:MMBFJ309LT1GOSMMBFJ309LT1GOS-NDMMBFJ309LT1GOSTR |
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