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參數(shù)資料
| 型號(hào)： | MRF839F |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | 14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | FM-6 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 15K |
| 代理商： | MRF839F |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
BV
CES
I
C
= 5.0 mA
BV
CEO
I
C
= 5.0 mA
BV
EBO
I
E
= 100
μ
A
I
CES
V
CE
= 15 V
h
FE
V
CE
= 5.0 V I
C
= 100 mA
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
40
UNITS
V
V
V
16
3.5
1
mA
---
10
150
C
OB
V
CB
= 15 V
f = 1.0 MHz
10
pF
P
G
η
C
V
CE
= 12.5 V
F
O
= 870 MHz
I
CQ
= 50mA P
OUT
= 3.0 W
8.0
50
10.0
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF839F
DESCRIPTION:
The
MRF839F
is Designed for
Class AB, Common Emitter
Applicatons Up to 960 MHz.
FEATURES INCLUDE:
Input Matching Network
High Gain
Gold Metalization
MAXIMUM RATINGS
I
C
0.6 A
V
CES
36 V
P
DISS
20 W @ T
C
= 25
O
C
T
J
-55
O
C to +200
O
C
T
STG
-55
O
C to +150
O
C
θ
JC
9.0
O
C/W
PACKAGE STYLE .230 6L FLG
MINIMUM
inches / mm
.115 / 2.92
.225 / 5.72
.075 / 1.91
.090 / 2.29
.720 / 18.29
B
C
D
E
F
G
A
MAXIMUM
inches / mm
.085 / 2.16
.110 / 2.79
.730 / 18.54
.235 / 5.97
.125 / 3.18
H
.355 / 9.02
DIM
K
L
I
J
.004 / 0.10
.120 / 3.05
.230 / 5.84
.006 / 0.15
.130 / 3.30
.260 / 6.60
K
4X .025 R
.040x45°
.115
I
.125
E
.430 D
H
G
F
J
C
A
B
2X.130
L
.160 / 4.06
.180 / 4.57
.980 / 24.89
.970 / 24.64
.355 / 9.02
.365 / 9.27
.365 / 9.27
1 & 3 & 4 & 6 = EMITTER 2 = BASE
5 = COLLECTOR
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