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參數(shù)資料
| 型號： | MRF7S21170HR3 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, NI-880, CASE 465B-03, 2 PIN |
| 文件頁數(shù)： | 11/17頁 |
| 文件大?。?/td> | 797K |
| 代理商： | MRF7S21170HR3 |
MRF7S21170HR3 MRF7S21170HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD =28 Vdc, IDQ = 1400 mA, 2110--2170 MHz Bandwidth
Video Bandwidth @ 170 W PEP Pout whereIM3 = --30dBc
(Tone Spacing from 100 kHz to VBW)
IMD3 = IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
VBW
—
25
—
MHz
Gain Flatness in 60 MHz Bandwidth @ Pout =50 W Avg.
GF
—
0.4
—
dB
Average Deviation from Linear Phase in 60 MHz Bandwidth
@Pout = 170 W CW
Φ
—
1.95
—
°
Average Group Delay @ Pout = 170 W CW, f = 2140 MHz
Delay
—
1.7
—
ns
Part--to--Part Insertion Phase Variation @ Pout = 170 W CW
f = 2140 MHz, Six Sigma Window
Φ
—
18
—
°
Gain Variation over Temperature
(--30°Cto+85°C)
G
—
0.015
—
dB/°C
Output Power Variation over Temperature
(--30°Cto+85°C)
P1dB
—
0.01
—
dB/°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MRF7S21170HR3_07 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs |
| MRF7S21170HR3_08 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF7S21170HR3_11 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs |
| MRF7S21170HR3_12 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors |
| MRF7S21170HR5 | 功能描述:射頻MOSFET電源晶體管 HV7 2.1GHZ WCDMA NI880H RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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